Unlock instant, AI-driven research and patent intelligence for your innovation.

Faster programming of highest multi-level state for non-volatile memory

A non-volatile storage and state technology, applied in the programming field of non-volatile memory

Active Publication Date: 2013-10-30
SANDISK TECH LLC
View PDF19 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Program disturb occurs more frequently when a large program voltage is applied to the word line

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Faster programming of highest multi-level state for non-volatile memory
  • Faster programming of highest multi-level state for non-volatile memory
  • Faster programming of highest multi-level state for non-volatile memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] One embodiment of a semiconductor memory system uses a NAND flash memory structure that includes arranging multiple transistors in series between two select gates in a NAND string. figure 1 is a top view showing one such NAND string 150 . figure 2 is its equivalent circuit. figure 1 and 2The NAND string depicted in includes four transistors 100 , 102 , 104 , and 106 arranged in series between a first select gate 120 and a second select gate 122 . The first select gate 120 gates the connection of the NAND string 150 to the bit line 126 . The second select gate 122 gates the connection of the NAND string 150 to the source line 128 . The first select gate 120 is controlled by applying an appropriate voltage to the control gate 120CG. The second select gate 122 is controlled by applying an appropriate voltage to the control gate 122CG. Each of transistors 100, 102, 104, and 106 has a control gate and a floating gate. The transistor 100 has a control gate 100CG and a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A coarse / fine programming technique is used for programming to lower states while using a standard technique (not coarse / fine programming) for programming to the highest state(s). However, when the programming of the lower states is finished, a number of programming pulses are still needed to program the highest state. To improve the programming speed, a bigger step size and longer programming pulse can be used from the moment that the lowest states have been programmed. At the same time, the programming technique for the highest state can be changed to a coarse / fine programming technique.

Description

technical field [0001] The present invention relates to the programming of non-volatile memory. Background technique [0002] Semiconductor memory has become more and more commonly used in various electronic devices. For example, non-volatile semiconductor memory can be used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. Electrically Erasable Programmable Read-Only Memory (EEPROM) and flash memory are the most popular non-volatile semiconductor memories. [0003] Both EEPROM and flash memory utilize a transistor structure with a floating gate located above and insulated from a channel region in a semiconductor substrate and also between source and drain regions. A control gate is disposed above and insulated from the floating gate. The threshold voltage Vt of the transistor is controlled by the amount of charge held on the floating gate. That is, the level of charge on the f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/12
CPCG11C16/12G11C16/02G11C16/04G11C16/10
Inventor 格里特·简·赫民克李希强
Owner SANDISK TECH LLC