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Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory

A magnetoresistive random access, spin transfer torque technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as data degradation, interference with MTJ305 logic state, memory integrity degradation, etc.

Inactive Publication Date: 2013-05-08
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since both read and write operations are performed by passing current through the MTJ 305, there is a possibility that the read operation will degrade the data stored in the MTJ 305
For example, if the read current is similar in magnitude to or greater than the write current threshold, there is a high chance that the read operation may disturb the logic state of the MTJ 305 and thus degrade the integrity of the memory

Method used

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  • Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
  • Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
  • Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory

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Embodiment Construction

[0025] Aspects of embodiments of the invention are disclosed in the following description and associated drawings directed to specific embodiments of the invention. Alternative embodiments are conceivable without departing from the scope of the invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention.

[0026] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.

[0027] As discussed in the background, STT-MRAM uses low write current per cell, which is an advantage of this memory type over MRAM. However, the cell read cur...

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Abstract

Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations.

Description

[0001] Claim of priority under 35 U.S.C. §119 [0002] This patent application claims the title of "Read Disturb REDUCTION CIRCUIT FOR SPINTRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY" filed on March 6, 2007. Priority to Provisional Application No. 60 / 893,229, which is assigned to the present assignee and is hereby expressly incorporated herein by reference. technical field [0003] Embodiments of the present invention relate to random access memory (RAM). More specifically, embodiments of the present invention relate to read current control in spin transfer torque magnetoresistive random access memory (STT-MRAM). Background technique [0004] Random Access Memory (RAM) is a ubiquitous component of modern digital architectures. RAM can be a stand-alone device, or it can be integrated or embedded in a device that uses RAM, such as a microprocessor, microcontroller, application specific integrated circuit (ASIC), system on a chip (SoC), and other technologies in th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06G11C11/16
CPCG11C11/16G11C7/02G11C7/067G11C7/12G11C7/062G11C11/1673G11C5/063G11C11/1675
Inventor 杨赛森升·H·康迈赫迪·哈米迪·萨尼
Owner QUALCOMM INC