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Method of light induced plating on semiconductors

A semiconductor, light-induced technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of reducing, accelerating the plating rate, increasing the adhesion of nickel and semiconductors, etc., to improve the adhesion and efficiency. , to ensure the effect of adhesion

Inactive Publication Date: 2012-03-28
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the light is maintained at the intensity required to ensure that nickel plating begins in a uniform manner, it will result in an accelerated plating rate, resulting in stressed nickel deposition, significantly increasing the likelihood of reduced adhesion of nickel to the semiconductor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-9

[0053] Embodiment 1-9 (comparative example)

[0054] Eight doped monocrystalline silicon wafers and one doped polycrystalline silicon wafer were provided with tapered bumps on the front side. Each doped silicon wafer has an n+ doped region on the front side of the wafer, forming the light-emitting layer. Each wafer has a pn-junction below the light emitting layer. The front side of each wafer is coated with Si 3 N 4 Composition of passivation layer or anti-reflection layer. The front side of each wafer has a pattern for the current traces that passes through the anti-reflection layer, leaving the surface of the silicon wafer exposed. Each current trace traverses the entire length of the wafer. The current traces are connected to bus bars at the ends of each wafer and at the center of each wafer. The backside of each wafer is p+ doped and contains aluminum electrodes.

[0055] In a chemically inert bath opaque to light, individual doped monocrystalline silicon wafers we...

Embodiment 10-16

[0068] Embodiment 10-16 (comparative example)

[0069] Using six doped monocrystalline semiconductor wafers and one doped polycrystalline wafer, the process described above in Examples 1-9 was repeated. The single crystal wafers of Examples 10-13 were plated with nickel using the same kind of electroless nickel plating composition as in Examples 1-9. Using NiPosit TM PM988, at a temperature of 35-45° C., nickel-plate the polycrystalline wafer of Example 14 and the single-crystalline wafers of Examples 15 and 16. Artificial light is applied to the wafer during the nickel plating cycle. The light source is a 250 watt halogen lamp.

[0070] Each wafer was immersed in one of the electroless nickel plating compositions in a chemically inert plating bath. The plating tank is transparent to light energy. Light was applied to each wafer and the light intensity was measured at eight points on the wafer to determine the average light intensity on each wafer during nickel deposition...

Embodiment 17-24

[0083] Four monocrystalline wafers and four polycrystalline wafers were doped as described above in Examples 1-9. Individual wafers were immersed in an electroless nickel plating composition in a chemically inert plating bath. The bath is transparent to light. Using Durposit TM SMT88 nickel plated the single crystal wafers of Examples 17-18. Using NiPosit TM PM988 nickel plated the remaining wafers. Artificial light was applied during nickel deposition. The light source was the 250 watt halogen lamp used in Example 2. The average light intensity of the wafers was determined as described in Examples 10-16. The initial light intensity of all examples was measured to be 13786 lux. After a predetermined amount of time, the initial light intensity is reduced to a predetermined amount (percentage) of the initial light intensity for the remainder of the plating cycle. Table 3 below shows the plating time, light intensity, nickel deposition thickness, and plating results for ...

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Abstract

Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.

Description

technical field [0001] The present invention relates to methods of photo-induced plating on semiconductors. More specifically, the present invention relates to methods of photo-induced plating on semiconductors in which high intensity light is first applied for a limited amount of time and then the light intensity is reduced for the remainder of the plating cycle. Background technique [0002] The process of metallizing semiconductors such as photovoltaic and solar cells involves forming conductive contacts on the front and back of the semiconductor. The metal coating must be able to form an ohmic contact with the semiconductor to ensure that charge carriers can leave the semiconductor unaffected and enter the conductive contact. In order to avoid current losses, the metallized contact grid must have sufficient current conductivity, ie a high electrical conductivity and a sufficiently high cross-sectional area of ​​the conductor tracks. [0003] There are a large number of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18C25D5/12C23C18/1653Y02E10/52C23C18/14C23C18/1667C23C18/1692C23C18/1651H01L31/022425Y02E10/50C23C18/143C25D5/625C25D5/611H01L31/04H01L21/208
Inventor G·哈姆D·L·雅克斯
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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