Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Treatment technology of accompanying gas in production process of trichlorosilane

An associated gas and production process technology, applied in the directions of halogenated silanes, halogenated silicon compounds, combined devices, etc., can solve the problems of polluted air and associated gas emissions, and achieve the effect of reducing pollution and production costs.

Inactive Publication Date: 2010-01-27
洛阳世纪新源硅业科技有限公司
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of air pollution caused by associated gas discharge, the present invention proposes a treatment process for associated gas in the production process of trichlorosilane

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0008] ①Dust removal: the associated gas during the production of trichlorosilane is recovered and reused in the dust removal equipment to initially purify the associated gas;

[0009] ②Leaching: In the two-stage leaching tower, under high temperature conditions, the associated gas after preliminary purification is rinsed with silicon tetrachloride, and the silicon powder that has not been cleaned of the associated gas is absorbed into the silicon tetrachloride solution;

[0010] ③Precipitation: Precipitate the leached silicon tetrachloride solution in the precipitation tank for harmless treatment;

[0011] ④Gas separation: freezing and separating the associated gas after leaching, and then compressing and freezing the separated gas with a compressor;

[0012] ⑤ Absorption: The gas after compression and freezing separation is sent to the hydrogen chloride separation tower to absorb the hydrogen chloride contained in the gas, and then the hydrogen is adsorbed and purified;

[0013] ⑥Exha...

Embodiment 2

[0015] After the leached silicon tetrachloride solution is precipitated in the precipitation tank, the silicon tetrachloride solution is sent to the rectification tower for rectification and reuse.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a treatment technology of accompanying gas in production of trichlorosilane, comprising the steps of removing dust, washing, precipitating, separating gas, absorbing, and treating waste gas. The technical solution of the invention purifies discharged waste gas, reduces the pollution to the air, reuses the waste and reduces the production cost.

Description

Technical field [0001] The invention relates to a gas treatment process, in particular to a treatment process of associated gas in the production process of trichlorosilane. Background technique [0002] At present, in the process of silicon tetrachloride (SiCl4) to produce trichlorosilane (SiHCl3), the associated gas contains silicon powder, hydrogen chloride, hydrogen and other substances, which directly emits not only a waste of resources but also pollutes the air. Summary of the invention [0003] In order to solve the problem of air pollution caused by the emission of associated gases, the present invention proposes a process for treating associated gases in the production of trichlorosilane. [0004] The technical scheme of the present invention: ①Dust removal: the associated gas during the production of trichlorosilane is recovered and reused in the dust removal equipment to preliminarily purify the associated gas; ②Leaching: In a two-stage leaching tower, under high temperat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107B01D50/00B01D53/00
Inventor 杨海建张扬马麟李占青
Owner 洛阳世纪新源硅业科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com