Treatment technology of accompanying gas in production process of trichlorosilane
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 洛阳世纪新源硅业科技有限公司
- Publication Date
- 2010-01-27
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
Technical field
[0001] The invention relates to a gas treatment process, in particular to a treatment process of associated gas in the production process of trichlorosilane. Background technique
[0002] At present, in the process of silicon tetrachloride (SiCl4) to produce trichlorosilane (SiHCl3), the associated gas contains silicon powder, hydrogen chloride, hydrogen and other substances, which directly emits not only a waste of resources but also pollutes the air. Summary of the invention
[0003] In order to solve the problem of air pollution caused by the emission of associated gases, the present invention proposes a process for treating associated gases in the production of trichlorosilane.
[0004] The technical scheme of the present invention: ①Dust removal: the associated gas during the production of trichlorosilane is recovered and reused in the dust removal equipment to preliminarily purify the associated gas; ②Leaching: In a two-stage leaching tower, under high temperat...