Semiconductor device and method for manufacturing the same
A semiconductor and electrode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as short circuit of semiconductor chip 102, and achieve high reliability
Inactive Publication Date: 2012-07-11
SANYO ELECTRIC CO LTD +1
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Problems solved by technology
However, if the height of the top 106 is lowered, the thin metal wires 104A extending obliquely from the top 106 may be short-circuited with the semiconductor chip 102.
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[0031] Usually, loops of metal wires using thin metal wires such as Figure 8 Shown in dotted line, depicts a triangular loop. This loop generally draws a triangular loop because the thin metal wire is extended upward after the ball bonding is performed locally at the first bonding point 200 , and after that, a meander portion is provided on the top 106 and then extended obliquely downward.
[0032] in addition, Figure 8 The same is true for the solid lines in . If simply considered, the head can be formed into an M-shape by pressing the top 106 of the thin metal wire 104A of the triangular loop from above. However, the trajectory of the thin metal wire 104B from the meander portion 202 to the second joint point draws a substantially linear trajectory (hereinafter referred to as a linear extension portion) obliquely downward, similarly to the triangular loop 104A. Therefore, in the triangular loop and the M loop, the linear extensions, specifically, the portions indicated by...
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A thin semiconductor device in which the loop height of a thin metal wire is lowered furthermore as compared with prior art. The semiconductor device has such a structure as the bonding pad (55) and the electrode (53B) of a semiconductor chip (54) are connected via a thin metal wire (51). The thin metal wire (51) draws a curve (57) from a first bond and has a second linear extension (60) through a bend (59) at the end of the curved portion (57).
Description
technical field [0001] The present invention relates to a semiconductor device using thin metal wires and a manufacturing method thereof. Background technique [0002] In recent years, the high performance of portable electronic devices such as mobile phones, PDAs, DVCs, and DSCs has accelerated, and in order for such products to be accepted by the market, miniaturization and weight reduction are required. Furthermore, in the process of global warming, it is sought to reduce the use of resources as much as possible without causing environmental load. Of course, semiconductor devices are also seeking to reduce weight, thickness and size, and to further reduce materials. [0003] On the other hand, in order to reduce the thickness of semiconductor devices, instead of using thin metal wires, conductive plates may be used instead of flip-chip mounting and thin metal wires. However, since the bonding technology of thin metal wires has been developed over a long period of time a...
Claims
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IPC IPC(8): H01L21/60
CPCH01L2924/15153H01L2224/73265H01L24/45H01L2224/85181H01L2224/48091H01L2224/48229H01L24/48H01L2224/83801H01L2224/45015H01L2224/48511H01L2924/01005H01L2224/291H01L2924/01013H01L2224/45144H01L2224/2919H01L2224/85045H01L24/85H01L2224/48095H01L24/49H01L2924/15787H01L2224/4903H01L2224/48247H01L2224/48599H01L21/58H01L2924/09701H01L24/83H01L2924/0781H01L2924/01058H01L23/4952H01L2224/4809H01L2924/1517H01L2924/01006H01L2924/01028H01L2924/01079H01L2924/01074H01L2224/8518H01L2924/01014H01L24/78H01L2924/01082H01L2224/83851H01L2924/014H01L2924/20752H01L2924/01029H01L2224/48465H01L2224/78301H01L2924/01019H01L2224/49051H01L2224/48227H01L2924/01033H01L2924/07802H01L2924/15747H01L2924/15788H01L2924/181H01L2224/85455H01L2224/85423H01L2224/85447
Inventor 中里功
Owner SANYO ELECTRIC CO LTD