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Method and system for monitoring photolithographic process

A technology of photolithography process and automatic monitoring system, which is applied in the field of photolithography process in semiconductor process, can solve the problems of rework of unqualified wafers, increase of staff burden, and inability to monitor the stability of process units, so as to improve stability and good quality. rate effect

Active Publication Date: 2013-04-17
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a monitoring method for the photolithography process to solve the problem that the stability of the traditional photolithography process unit cannot be monitored, so that the stability and yield of the entire photolithography process cannot be guaranteed, resulting in unqualified wafers Repeated rework, increasing the burden on staff defects

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  • Method and system for monitoring photolithographic process
  • Method and system for monitoring photolithographic process
  • Method and system for monitoring photolithographic process

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Embodiment 1

[0017] Embodiment 1, the time parameter used for monitoring in the automatic monitoring method of the lithography process of the present invention is the duration of the post-baking process unit, and the monitoring process unit is the post-baking process unit of the auxiliary device in the lithography process device. As mentioned above, the automatic monitoring method of the photolithography process performs the following steps: step S1, collect the action time of the process unit; step S2, store the action time of the process unit; step S3 judge whether the currently collected process unit is the monitoring unit PAB process unit, if not Then return to step S1; if yes, execute step S4; step S4 calculates the monitoring time parameter: PAB duration according to the relationship between the monitoring time parameter and the monitoring process unit action time. At this time, the relationship between the monitoring time parameter and the monitoring process unit action time in step ...

Embodiment 2

[0020] Embodiment 2, the time parameter used for monitoring in the automatic monitoring method of the lithography process of the present invention is the post-exposure bake delay time parameter, and the monitoring process unit is the post-exposure bake process unit executed by the auxiliary device in the lithography process device.

[0021] As mentioned above, the automatic monitoring method of the lithography process performs the following steps: step S1, collecting the action time of the process unit; step S2, storing the action time of the process unit; step S3 judging whether the currently collected process unit is a monitoring unit PEB process unit, if not , then return to step S1; if yes, then execute step S4; step S4 calculates the monitoring time parameter: PEB delay time according to the relationship between the monitoring time parameter and the monitored process unit action time. At this time, the relationship between the monitoring time parameter and the monitoring p...

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Abstract

The invention provides a method and a system for automatically monitoring a photolithographic process. The monitoring method comprises the following steps: a, acquiring the action time of a process unit; b, storing the action time of the process unit; c, determining whether the acting process unit is a monitoring process unit or not, wherein if the process unit is the monitoring process unit, a step d is performed, if the process unit is not the monitoring process unit, the step a is performed; d, calculating a monitoring time parameter according to a relational expression of the monitoring time parameter and the action time of the monitored process unit; and e, determining whether the monitoring time parameter calculated in the step d is in accordance with a standard time range or not, wherein if the monitoring time parameter is not in accordance with the standard time range, the monitored process unit is paused. The monitoring system comprises a process unit trigger module, a data acquisition module, a data storage module, a determination module, a calculation module, a comparison module and a control module. The method and the system can solve the problem that the conventional photolithographic process cannot realize the monitoring of the time parameter of the process unit.

Description

technical field [0001] The invention relates to the field of photolithography (Photo Lithography) technology in semiconductor technology, in particular to a monitoring method and system for photolithography technology. Background technique [0002] In the semiconductor process, photolithography is used to realize the fabrication of micro-semiconductor elements and circuit patterns on the wafer. Therefore, the photolithography process is the core manufacturing part in the manufacturing process of semiconductor chips and devices, which directly affects the yield rate of the manufactured semiconductor chips or devices. The basic process of the photolithography process is to apply photoresist on the wafer first, then use a pre-designed pattern mask to expose the photoresist on the wafer, and develop the wafer photoresist after exposure to realize wafer patterning. Each process unit executed in the entire photolithography process is executed in a certain flow sequence. [0003]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 杨晓松刘洪刚
Owner SEMICON MFG INT (SHANGHAI) CORP