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Silicon nanowire-based fluorescence chemical logic switch and preparation method thereof

A silicon nanowire, logic switch technology, applied in the field of fluorescent chemical logic switches, to achieve the effect of small size

Inactive Publication Date: 2012-05-30
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Another object of the present invention is to provide a fluorescent chemical logic switch based on silicon nanowires prepared by the first method to solve the problems faced by the use of organic molecular logic switches

Method used

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  • Silicon nanowire-based fluorescence chemical logic switch and preparation method thereof
  • Silicon nanowire-based fluorescence chemical logic switch and preparation method thereof
  • Silicon nanowire-based fluorescence chemical logic switch and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 3 grams of SiO was placed in the middle of the alumina furnace tube of the horizontal tube furnace, and then the alumina furnace tube was evacuated to 10 -2 Pa, and then feed a mixed gas of argon and hydrogen into the alumina furnace tube, wherein the hydrogen content accounts for between 5% of the volume of the mixed gas. The air pressure of the alumina furnace tube was stabilized at 10000 Pa. Then the temperature of the tube furnace was raised to 1290° C., and after maintaining the temperature for 6 hours, the temperature of the tube furnace was naturally cooled. Finally, silicon nanowires are obtained in the low-temperature zone of the tube furnace. The silicon nanowires have a diameter of 15-25nm and a length of 1um-10um.

[0026] The obtained silicon nanowires were treated in oxygen plasma at a temperature of 150° C. for 3 hours. Add 20mg of silicon nanowires treated with oxygen plasma and 40mL of freshly steamed anhydrous toluene into a 100mL round bottom flask ...

Embodiment 2

[0030] 3 grams of SiO was placed in the middle of the alumina furnace tube of the horizontal tube furnace, and then the alumina furnace tube was evacuated to 10 -2 Pa, and then feed a mixed gas of argon and hydrogen into the alumina furnace tube, wherein the hydrogen content accounts for between 8% of the volume of the mixed gas. The air pressure of the alumina furnace tube was stabilized at 40000 Pa. Then the temperature of the tube furnace was raised to 1320° C., and the temperature was maintained for 8 hours, and then the temperature of the tube furnace was naturally lowered. Finally, silicon nanowires are obtained in the low-temperature zone of the tube furnace. The silicon nanowires have a diameter of 15-25nm and a length of 1um-10um.

[0031] The obtained silicon nanowires were irradiated with a continuous laser with a wavelength of 325 nm for 0.5 hours. Add 20 mg of silicon nanowires treated with oxygen plasma and 40 mL of anhydrous toluene into a 100 mL round-bottome...

Embodiment 3

[0035] 3 grams of SiO was placed in the middle of the alumina furnace tube of the horizontal tube furnace, and then the alumina furnace tube was evacuated to 10 -2 Pa, and then feed a mixed gas of argon and hydrogen into the alumina furnace tube, wherein the hydrogen content accounts for between 8% of the volume of the mixed gas. The air pressure of the alumina furnace tube was stabilized at 40000 Pa. Then the temperature of the tube furnace was raised to 1320° C., and the temperature was maintained for 8 hours, and then the temperature of the tube furnace was naturally lowered. Finally, silicon nanowires are obtained in the low-temperature zone of the tube furnace. The silicon nanowires have a diameter of 15-25nm and a length of 1um-10um.

[0036] The obtained silicon nanowires were irradiated with continuous laser light with a wavelength of 325 nm for 2 hours. Add 20mg of silicon nanowires treated with oxygen plasma and 40mL of freshly steamed anhydrous toluene into a 100m...

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Abstract

The invention belongs to the field of fluorescence chemical logic switches in a one-dimensional nanostructure, in particular relates to a silicon nanowire-based fluorescence chemical logic switch and a preparation method thereof. The method comprises the following steps: carrying out surface treatment on a silicon nanowire prepared by a vapor deposition method, wherein the surface treatment comprises surface plasma treatment, laser radiation, ion surface bombardment or surface activation by chemical methods; and then, modifying the surface of the dry silicon nanowire after the surface treatment so that dansylamide with a logic switch function is arranged on the surface by covalent modification to obtain the silicon nanowire-based fluorescence chemical logic switch. The silicon nanowire-based fluorescence chemical logic switch can be used for preparing photochemical logic devices with smaller volumes and higher integration degrees.

Description

technical field [0001] The invention belongs to the field of fluorescent chemical logic switches with one-dimensional nanostructures, in particular to a method for preparing a silicon nanowire-based fluorescent chemical logic switch, and a silicon nanowire-based fluorescent chemical logic switch obtained by the method. Background technique [0002] Due to the diverse design and controllable synthesis of organic molecules, in recent years, the optical switching devices composed of organic molecules have attracted great interest as a potential important component in future digital processing systems. The output of optical, electrical, and magnetic signals of organic molecules can be changed through the input of optical, electrical, magnetic, and chemical signals, so that binary conversion can be realized through the encoding of input and output signals, so as to achieve molecular scale logic operation. Among various input and output signals, the fluorescent signal is an ideal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/00G01N33/20C01B33/00B82B3/00C09K9/00
Inventor 师文生穆丽璇
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI