Electrostatic discharge protection semiconductor device and method for mafacturing the same

A semiconductor and conductive technology, applied in the field of electrostatic discharge protection semiconductor devices and their manufacturing, can solve problems such as loss interface

Inactive Publication Date: 2010-05-26
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, the electrons and holes ionized by impacts in the lower edge gate region 111 may deplete the interf

Method used

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  • Electrostatic discharge protection semiconductor device and method for mafacturing the same
  • Electrostatic discharge protection semiconductor device and method for mafacturing the same
  • Electrostatic discharge protection semiconductor device and method for mafacturing the same

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Embodiment Construction

[0027] The embodiment of the present invention relates to an electrostatic discharge protection semiconductor device. reference example figure 2, the ESD protection semiconductor device 200 may include a gate 210 , a source region 215 , a first drain region 220 and a second drain region 225 . According to an embodiment of the present invention, the gate 210 may include a gate oxide layer 205 and a gate electrode 207 , and may be multi-layered in and / or over the substrate 201 . In an embodiment of the present invention, the source region 215 may be formed in and / or over a predetermined region of the substrate 201 on one side of the gate 210 . In an embodiment of the present invention, the first drain region 220 may be formed in and / or over a predetermined region of the substrate 201 on the side opposite to the gate 210 .

[0028] According to an embodiment of the present invention, the second drain region 225 may be connected to a lower region of the first drain region 220 ....

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Abstract

An electrical device, including a semiconductor device such an electrostatic discharge protection semiconductor device, and a method for manufacturing the same. An electrostatic discharge protection semiconductor device may include a substrate and a gate in and/or over the substrate. The gate may be multi-layered, and may include a gate oxide layer and a gate electrode. An electrostatic discharge protection semiconductor device may include a source region formed in and/or over a predetermined area of the substrate on a side of the gate, and a plurality of drain regions which may be sequentially multi-layered in and/or over the substrate on an opposing side of the gate in a vertical direction. At least one drain region may be overlapped with the gate in a horizontal direction.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2008-0097104 (filed on October 2, 2008) based on 35 U.S.C119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device, and more particularly, to an electrostatic discharge protection semiconductor device and a manufacturing method thereof, wherein the abnormal leakage current ( abnormal leakage current). Background technique [0003] Embodiments of the present invention relate to an electronic device. Some embodiments of the present invention relate to a semiconductor device (eg, an electrostatic discharge protection semiconductor device) and a method of manufacturing the same. [0004] Recently, semiconductor devices such as high voltage semiconductor devices have been widely developed and used in various applications including liquid crystal display (LCD), integrated circuit (IC), and other technologies. ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L23/60
CPCH01L29/66659H01L29/1045H01L29/78H01L29/7835H01L29/0847H01L2924/0002H01L2924/00H01L27/04
Inventor 金锺玟宋宗圭金山弘
Owner DONGBU HITEK CO LTD
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