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Image sensor and manufacturing method thereof

An image sensor and substrate technology, applied in semiconductor/solid-state device manufacturing, image communication, electric solid-state devices, etc., can solve the problems of dark current reduction saturation and sensitivity, image error, output image sensitivity reduction, etc.

Inactive Publication Date: 2010-05-26
DONGBU HITEK CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this leads to an increase in the dark current
[0007] Further, both the source and drain of the transfer transistor are heavily doped with N-type impurities, which leads to the charge-sharing phenomenon
When the charge sharing phenomenon occurs, the sensitivity of the output image decreases and image errors occur
[0008] Additionally, since photocharges cannot easily move between the photodiode and the readout circuitry, dark currents and / or reduced saturation and sensitivity

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Embodiment Construction

[0019] When the terms "on" or "over" are used herein and refer to a layer, region, pattern or structure, it needs to be understood that a layer, region, pattern or structure may be directly on another layer or structure, or that intervening layers, intervening layers, or structures may also be present. region, intermediate pattern, or intermediate structure. When the terms "under" or "beneath" are used herein and refer to a layer, region, pattern or structure, it is to be understood that a layer, region, pattern or structure may be directly beneath another layer or structure, or that intervening layers, intervening regions may also be present. , intermediate pattern or intermediate structure.

[0020] figure 1 It is a cross-sectional view showing an image sensor according to an embodiment of the present invention.

[0021] see figure 1 , in an embodiment, the image sensor may include: a readout circuit 120 (such as Figure 5B shown in); the metal line 150 disposed on the f...

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Abstract

The present invention provides an image sensor and a manufacturing method thereof. The image sensor may includes a readout circuit arranged on a first substrate, a metal wire arranged on the first substrate and electrically connected to the readout circuit, an insulating layer arranged on the metal wire, an electrode arranged on the insulating layer, an image sensor element arranged on the electrode, and a pixel separating region arranged in the image sensor element.

Description

technical field [0001] The invention relates to an image sensor and a manufacturing method thereof. Background technique [0002] An image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors may be classified into Charge Coupled Device (CCD) image sensors and Complementary Metal Oxide Semiconductor (CMOS) image sensors (CIS). [0003] During the fabrication of image sensors, ion implantation may be used to form photodiodes in the substrate. Since the size of the photodiode continues to decrease, the purpose is to increase the number of pixels without increasing the size of the chip, thereby also reducing the area of ​​the light receiving portion in the image sensor. This results in a decrease in image quality. [0004] In addition, since the stack height is not reduced as much as the area of ​​the light receiving portion, the number of photons incident to the light receiving portion is also reduced. This is due to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N3/15H01L27/146H01L21/82H04N25/00
CPCH01L27/14636H01L27/14634H01L27/146
Inventor 黄俊
Owner DONGBU HITEK CO LTD
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