Back electrode in dye-sensitized battery structure and preparation method thereof
A dye-sensitized battery and back electrode technology, which is applied to the back electrode in the structure of the dye-sensitized battery and the field of preparation thereof, can solve problems such as unsatisfactory effects and unsatisfactory effects, and achieve improved conversion efficiency, current density, The effect of path extension and charge loss reduction
Inactive Publication Date: 2011-08-24
PEKING UNIV
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] For the three conditions mentioned above, scientists around the world have tried to use nanoporous Fe 2 o 3 , CdS, SnO 2 and other thin films are used as electrodes of dye-sensitized batteries, but the effect is not very satisfactory. The main reason is that the above-mentioned third item cannot be satisfied.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0033] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0034] Such as figure 1 As shown, the embodiment of the present invention provides a back electrode in a dye-sensitized cell structure according to an embodiment of the present invention, which includes a conductive substrate 1, a grating-shaped copper indium selenide film 2 on the conductive substrate, and a The platinum thin film 3 in the gap of the copper indium selenide thin film 2 . The copper indium selenium thin film is a polycrystalline film with a thickness of 1.5-2.0 μm. Preferably, the thickness of the copper indium selenide thin film 2 is 1.5 μm. The particle size of the CISe in the CISe thin film 2 is 90-120 nm. Preferably, the particle size of the CISe in...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a back electrode in dye-sensitized battery structure, comprising a conductive substrate, raster shape copper indium selenide film formed on the conductive substrate and platinum film formed at the sunken area of the copper indium selenide film. Compared with the traditional platinum electrode, the invention greatly reduces cost of back electrode while ensuring catalytic action of platinum on dye sensitization reaction, cost of the whole solar cell is indirectly reduced, and meanwhile light transmittance of back electrode is improved; by adjusting raster structure of back electrode, reflectivity can be effectively increased, thus the path of incident light in the interior of solar cell is lengthened and light absorption rate is improved.
Description
technical field [0001] The invention relates to the field of photovoltaic utilization of solar energy, in particular to a back electrode in a dye-sensitized battery structure and a preparation method thereof. Background technique [0002] French scientist Henri Becqμerel first observed the phenomenon of photoelectric conversion in 1839, but it was not until the advent of the first practical semiconductor solar cell in 1954 that the idea of "converting solar energy into electrical energy" really became a reality. In the initial development stage of solar cells, the materials used are generally narrow band gap semiconductor materials with certain absorption in the visible region, so this kind of solar cell is also called semiconductor solar cell. Although the ability of the wide bandgap semiconductor itself to capture sunlight is very poor, by absorbing appropriate dyes on the surface of the semiconductor, the solar energy can also be converted into electrical energy by virt...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/04H01G9/20H01M14/00H01L51/44H01L51/48H01L51/42
CPCY02E10/542Y02E10/549
Inventor 康晋锋王宝王旭陆自清刘力锋
Owner PEKING UNIV