Semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problems of Schottky diode quality impact, high leakage current and reverse power consumption, and complicated device manufacturing
Active Publication Date: 2010-06-02
INFINEON TECH AUSTRIA AG
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Problems solved by technology
This complicates the fabrication of the device
Also, the quality of Schottky diodes is often affected by the subsequent processes required to form MOSFETs
Additionally, Schottky diode rectifiers have issues such as high leakage current and reverse power dissipation
Also, for example for power supply and power converter applications, these issues typically increase with temperature and current, thus causing reliability issues
Therefore, monolithically integrated power devices including Schottky barrier diodes can cause design problems
Method used
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[0047] In the following Detailed Description, reference is made to the accompanying drawings, which form a part hereof and which are illustrated by means of illustrations of specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "proterior", "traudal", etc. are used with reference to orientations in the figures being described. Since components of embodiments of the present invention may be positioned in many different orientations, directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural and logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is contemplated that the present invention incl...
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A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.
Description
technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Field effect controlled power switching devices such as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) or Insulated Gate Bipolar Transistors (IGBTs) have been used in various applications including but not limited to as switches in power supplies and power converters. exist figure 1 An example describing the use of MOSFETs in dc converters is given in . [0003] The direction of current flow through the field effect control device acting as a switch is different in different operating cycles of the power converter. In the "forward mode" of the FET, the pn-body diode at the body-drain junction of the FET is reverse biased, and the resistance of the device is determined by the voltage control. In the "reversed mode" of the field effect controlled device, the pn-body diode is forward biased. This results in losse...
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IPC IPC(8): H01L27/04H01L29/78H01L29/06H01L21/77H01L21/336
CPCH01L29/0623H01L21/26586H01L29/66727H01L29/1095H01L29/7803H01L29/404H01L29/7813H01L29/4966H01L29/41766H01L29/0878H01L29/66734H01L29/086H01L29/7397H01L29/0834H01L29/42368H01L29/495H01L29/407
Inventor O·黑伯伦J·克伦里F·赫勒W·里格M·波尔兹尔
Owner INFINEON TECH AUSTRIA AG