Silicon controlled rectifier and manufacturing method thereof

Abstract

The invention discloses a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises a semiconductor substrate, a first P+ doped region, a first N+ doped region, a second P+ doped region, a second N+ doped region, a third P+ doped region or a third N+ doped region, a fourth P+ doped region or a fourth N+ doped region, wherein an N well and a P well are positioned above the semiconductor substrate; the first P+ doped region and the first N+ doped region are formed in the N well; the second P+ doped region and the second N+ doped region are formed in the P well; the third P+ doped region or the third N+ doped region is formed at the bonding position of the N well and the P well; and the fourth P+ doped region or the fourth N+ doped region is formed below the third P+ doped region or the third N+ doped region and in the N well or the P well. The invention has the advantages that the trigger voltage value of an SCR structure can be greatly decreased, thereby improving the integral protective capacity of an ESD; the trigger voltage value of a new SCR structure can be regulated according to the different requirements of a designer, so that the ESD can exert the optimal protective capacity in different circuit designs; and under the same ESD protection requirements, the area can be saved, thereby lowering the design cost.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a silicon controlled rectifier and a manufacturing method thereof. Background technique [0002] With the increasingly advanced semiconductor process, more and more designers pay more and more attention to the protection of electrostatic discharge (ESD) in IC design. The components that make up the ESD protection circuit include resistors (Resistor), diodes (Diode), triodes (Bipolar), gate grounded metal oxide half field effect transistors (GGMOSFET), gate coupled metal oxide half field effect transistors (GCMOSFET), silicon controlled rectifier (SCR), etc. [0003] Among many ESD protection devices, a silicon controlled rectifier (SCR) has the best ESD protection capability under the same area due to its lower holding voltage. However, when the SCR structure is used as an ESD protection device, it has a relatively high trigger voltage value (Vt1), so that the ESD protection effect of ...

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Problems solved by technology

However, these improved SCR structures have certain restrictions on reducing the trigger voltage, and the trigger voltage value is difficult to control, which increases the difficulty of the designer's design.

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