The invention discloses a high-
voltage ESD protective device with dual latch-up resistance and of an annular
LDMOS-SCR structure. The high-
voltage ESD protective device with the dual latch-up resistance and of the annular
LDMOS-SCR structure can be applied to an on-
chip IC. The high-
voltage ESD protective device with the dual latch-up resistance and of the annular
LDMOS-SCR structure comprises a P type substrate, an N type buried layer, a first P trap, a first N trap, a second P trap, a P
adulterant, a second N trap, a third P trap, an isolation area, a first P+, a first N+, a second N+, a second P+, a third N+, a third P+, a fourth N+, a fourth P+, a fifth N+, a sixth N+, a fifth P+, a
metal anode and a
metal cathode, wherein a Zener breakdown ESD current discharging path is formed by the second N+, the second P+, the first N+ and the first P+ or by the fourth P+, the fifth N+, the sixth N+ and the fifth P+. According to the high-voltage ESD protective device with the dual latch-up resistance and of an annular LDMOS-SCR structure, the ESD robustness of the device can be improved, the maintaining voltage can be improved, and the trigger voltage can be reduced; due to the design of the annular
layout of the LDMOS-SCR structure, the
on resistance can be reduced, and the maintaining current can be improved; the ESD
protective capacity of the dual latch-up resistance is achieved.