An electrostatic discharge protective structure with the bidirectional protective capacity comprises a P-type substrate, an N-type well region, a first P-type heavily doped region, a second P-type heavily doped region, a first N-type heavily doped region, a second N-type heavily doped region, a third N-type heavily doped region, a fourth N-type heavily doped region, a first field oxide layer, a second field oxide layer, a third field oxide layer, a fourth field oxide layer and a grid oxide layer, a grid polycrystalline silicon layer, a first metal layer, a second metal layer, a third metal layer, a fourth metal layer, a fifth metal layer and a metal layer II. The electrostatic discharge protective structure has voltage resistance both in the positive and the negative directions. It is guaranteed that the structure will not affect the normal work of an internal circuit, the structure can provide electrostatic discharge current relief paths in the positive and the negative directions when meeting electrostatic discharge pulses, the purpose of electrostatic discharge protection is achieved, and the electrostatic discharge protective structure with the bidirectional protective capacity can be applied to an integrated circuit needing bidirectional electrostatic discharge protection.