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Resistance type random access memory structure and manufacturing method thereof

A resistive random access memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as difficulty in interpreting component signals

Active Publication Date: 2010-06-09
NAN YA TECH
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Problems solved by technology

[0004] However, the voltage-to-current value of the known resistive random access memory will fluctuate, and the current-to-voltage curves of the low-resistance state and the high-resistance state will overlap, making it difficult to interpret the component signal

Method used

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  • Resistance type random access memory structure and manufacturing method thereof
  • Resistance type random access memory structure and manufacturing method thereof
  • Resistance type random access memory structure and manufacturing method thereof

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Embodiment Construction

[0021] Figure 2 to Figure 3 What is shown is a schematic diagram of the manufacturing method of the resistive random access memory of the present invention. First, if figure 2 As shown, after deposition, sputtering, exposure, development, etching and other steps, the lower electrode 12, the resistive layer 14, and the upper electrode 16 are respectively formed as the resistive random access memory 10. The lower electrode 12 can be made of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), platinum (Pt), gold (Au ), copper (Cu), copper-aluminum alloy (AlCu) and other conductive materials are used as electrode materials, but oxygen-free conductive materials are preferred. The material that resistance layer 14 can use is for example: titanium oxide (TiO), nickel oxide (NiO), tungsten oxide (WO 3 ), zirconia (ZrO), copper oxide (CuO), hafnium oxide (HfO), tantalum oxide (TaO), zinc oxide (ZnO), aluminum oxide (Al...

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Abstract

The invention discloses a resistance type random access memory structure and a manufacturing method thereof. The manufacturing method comprises the following steps of: firstly, forming a lower electrode; secondly, forming a resistance layer on the lower electrode; thirdly, forming an upper electrode on the resistance layer, wherein the upper electrode is selected from the groups of tin indium oxide and indium zinc oxide; and finally, irradiating the upper electrode by using ultraviolet rays.

Description

technical field [0001] The invention relates to a resistive random access memory structure and a manufacturing method thereof, in particular to a resistive random access memory structure with preferred resistance switching characteristics and a manufacturing method thereof. Background technique [0002] Resistive random access memory (RRAM) is one of many novel memories developed in the industry at present, which utilizes the characteristic of resistance switching to store bit data. [0003] figure 1 Shown are the current-voltage curves of an ideal RRAM in its low-resistance state and high-resistance state. like figure 1 As shown, in an ideal state, when the resistive random access memory is performing data writing (set), as the voltage increases, the current through the resistive random access memory will also gradually increase, that is, That is to say, the resistance of the RRAM will gradually switch from a high resistance state to a low resistance state, and in the pr...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C16/02G11C11/56
Inventor 谢君毅吴昌荣施能泰刘国辰
Owner NAN YA TECH
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