Method for testing and extracting bipolar transistor process deviation model parameter on line

A bipolar transistor and process deviation technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problem that the specific range of IS and NF cannot be obtained very accurately, and achieve strong physical and technological The effect of bias model accuracy

Active Publication Date: 2010-06-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

In the model calculation, IS and NF work together to adjust the value of Vbe, so this method cannot accurately obtain the specific range of IS and NF

Method used

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  • Method for testing and extracting bipolar transistor process deviation model parameter on line
  • Method for testing and extracting bipolar transistor process deviation model parameter on line
  • Method for testing and extracting bipolar transistor process deviation model parameter on line

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Embodiment Construction

[0024] The online testing and extraction method of the process deviation model parameters of the bipolar transistor of the present invention adopts the Gummel-Poon model to model the bipolar transistor (BJT), and uses IS and NF to test the process deviation model parameters of the saturation current.

[0025] In the first step, short the base and collector in the test loop of the Gummel plot (such as figure 2 Shown), the reference level emitter voltage (Ve) is 0.

[0026] The second step is to sweep the difference between the base voltage and the emitter voltage (Vbe) from 0.1 volts to 0.8 volts, select any two or more points, and test the corresponding collector current (Ic) value. For example, when Vbe is 0.5V and 0.7V respectively (you can also measure several voltage points), test the collector current (Ic) value. The collector current-base voltage data obtained from the test is as follows image 3 shown.

[0027] The third step is to take the logarithmic value of the ...

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Abstract

The invention discloses a method for testing and extracting a bipolar transistor process deviation model parameter on line. The method comprises the following steps of: short connecting a base electrode and a collector electrode of a Gumme1 plot testing loop; setting a reference level emitter voltage as 0; scanning the voltage difference between a base electrode voltage and a collector electrode voltage from 0.1 v to 0.8 v; choosing any two or more points; testing a corresponding collector electrode current value; taking a logarithm value of each point of the collector electrode current; deriving a linear function that Y is equal to AX+B, calculating the value of A and B in the linear function; evaluating a value of a model parameter IS and NF; and testing a whole silicon slice on line to obtain a process deviation range of the IS and NF. The method of the invention tests the specific value and the process deviation range of the IS and NF on line so as to enhance the physical property of the process deviation model of a BJT device.

Description

technical field [0001] The invention relates to a test method of a semiconductor device, in particular to an online test and extraction method of bipolar transistor process deviation model parameters. Background technique [0002] At present, the industry mostly adopts the Gummel-Poon model to model the bipolar transistor (BJT). The process deviation model of the saturation current is generally adjusted by two parameters of the transmission saturation current (IS) and the forward current emission coefficient (NF). [0003] This Gummel-Poon model extracts the method of process deviation model parameter to the bipolar transistor (BJT), generally be that emitter current (Ie) is 1 microampere, and base voltage and collector voltage are equal to zero (Vb=Vc=0V ), directly test the floating range of base voltage and emitter voltage difference (Vbe), and then calculate the range of IS and NF by software fitting method (such as figure 1 shown). In the model calculation, IS and NF...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 蔡描周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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