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Manufacturing method of embedded metal through-hole wafer and device thereof

A technology of metal through holes and manufacturing methods, which is applied in the direction of manufacturing microstructure devices, microstructure devices, metal material coating technology, etc., and can solve problems such as high cost, limited application, unfavorable mass production of pre-embedded metal through hole wafers, etc. , to achieve the effect of realizing manufacturing, realizing mass production and shortening the production cycle

Active Publication Date: 2010-06-23
MEMSIC SEMICON WUXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is that the cost of the existing pre-embedded metal through-hole wafer manufacturing method is too high, which is not conducive to the mass production of pre-embedded metal through-hole wafers, thereby limiting its wide application

Method used

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  • Manufacturing method of embedded metal through-hole wafer and device thereof
  • Manufacturing method of embedded metal through-hole wafer and device thereof
  • Manufacturing method of embedded metal through-hole wafer and device thereof

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Embodiment Construction

[0025] The specific implementation of the utility model of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] The present invention relates to a method for manufacturing a pre-buried metal through-hole wafer. In this embodiment, it is a method for manufacturing a glass wafer, which includes the following steps:

[0027] The first step is to provide a pair of load-bearing devices, a high-temperature resistant mold, and a number of metal tungsten wires; the load-bearing device is preset with a number of through holes; and the mold is provided with a cylindrical housing cavity, and the bottom is provided with a number of through holes for Connect the inside of the receiving cavity with the outside of the mold.

[0028] In the second step, pass the tungsten wire through a carrying device and the through hole at the bottom of the mold, and after passing through the cavity of the mold, pass through the through hole of another carry...

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Abstract

The invention relates to a manufacturing method of an embedded metal through-hole wafer and a device thereof, wherein the method comprising the following steps: linear metal penetrates through the through holes of a bearing device and the bottom part of a die, passes through the accommodating cavity of the die, penetrates through the through hole of another bearing device, and then is fixed at both ends of each bearing device to be strained. The raw material of the wafer is poured into the accommodating cavity of the die, the die is heated to the temperature of more than 100 DEG C of the softening point of the raw material of the wafer, and then the heat is preserved for at least 10 minutes. The die is cooled to the room temperature, and a wafer cylinder is taken out and is cut to obtain the wafer with the metal through hole. The manufacturing method of an embedded metal through hole wafer and the device thereof have low wafer manufacturing cost, help the a large number of wafer production, and can let the wafer widely used.

Description

Technical field [0001] The invention relates to a manufacturing method and a device for a wafer (wafer), in particular to a manufacturing method and a device for a pre-buried metal through-hole wafer. Background technique [0002] With the continuous development of semiconductor process technology, semiconductor packaging technology also continues to develop. In the field of packaging, the development of wafer-level packaging has also made great progress, and is increasingly used in various fields, especially in MEMS (Micro Electro Mechanical Systems) packaging. [0003] As for MEMS packaging, TSV, as the core technology, determines the fate of wafer-level packaging. In recent years, various through-hole technologies have emerged in an endless stream, but due to technical bottlenecks and high costs, few technologies can be used in actual production. [0004] The TSV technology solutions commonly used in the industry currently mainly use etching technology. A through hole of a cert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 段志伟朱大鹏陈利军
Owner MEMSIC SEMICON WUXI
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