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Semiconductor process and silicon baseplate and chip packaging structure formed by applying same

A semiconductor and process technology, which is applied in the field of silicon substrate and chip packaging structure, can solve problems such as inability to achieve thinning, and achieve the effect of thin package thickness

Inactive Publication Date: 2010-06-23
UNIMICRON TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the overall height of the ball grid array (BGA) package structure is about 1.0-1.4mm, which cannot meet the requirement of thinning (less than 0.5mm)

Method used

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  • Semiconductor process and silicon baseplate and chip packaging structure formed by applying same
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  • Semiconductor process and silicon baseplate and chip packaging structure formed by applying same

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Embodiment Construction

[0037] Figure 1A to Figure 1P It is a schematic cross-sectional view of a semiconductor process according to an embodiment of the present invention. Please refer to Figure 1A Regarding the semiconductor process of this embodiment, first, a silicon substrate 110 is provided, wherein a first insulating layer 120 is formed on the silicon substrate 110 . In this embodiment, the material of the first insulating layer 120 includes silicon oxide and silicon nitride.

[0038] Please refer to Figure 1B , and then, forming a first patterned photoresist mask 130 a on the first insulating layer 120 . Next, at least one stepped structure 140 is formed on the silicon substrate 110 (please refer to Figure 1L ). In detail, the steps of forming the stepped structure 140 are as follows, please refer to Figure 1C and Figure 1D, first, using the first patterned photoresist mask 130a as an etching mask, etch the first insulating layer 120 exposed outside the first patterned photoresist...

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Abstract

The invention provides a semiconductor process and a silicon baseplate and a chip packaging structure formed by applying the same. The process comprises the steps of: firstly, providing a silicon material; secondly, partially exposing one surface of the silicon material and etching the surface of the silicon material so that the silicon material forms a step-shaped structure which comprises at least one first notch with a first depth and a second notch with a second depth, wherein the first depth is less than the second depth, and the aperture of the first notch is larger than that of the second notch; and sequentially forming a final insulating layer and a metal seed layer on the step-shaped structure; forming a patterned photoresist layer on the metal seed layer; forming a line layer for covering part of the metal seed layer exposing above the first notch; and then removing away the patterned photoresist layer and part of the metal seed layer below the patterned photoresist layer.

Description

technical field [0001] The present invention relates to a semiconductor process, and in particular to a silicon substrate and a chip packaging structure formed by applying the semiconductor process. Background technique [0002] Nowadays, with advanced semiconductor technology, an integrated circuit chip (IC chip) has a large number of transistors arranged in high density and many signal pads arranged on the surface of the chip. In order to package these chips, these chips are usually mounted on a chip package substrate to form a chip package structure, wherein the chip can obtain sufficient signal paths, heat dissipation paths and structural protection through the packaging process. [0003] At present, with the continuous improvement of packaging technology, various chip packaging structures are constantly being introduced. For example, the chip is attached to the chip pad or the inner pin of the lead frame to form a thin small size package (TSOP), Alternatively, the chip...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L21/50H01L23/488H01L23/31
CPCH01L24/97H01L2224/48091H01L2224/49171H01L2924/14H01L2924/15787H01L2924/18165
Inventor 吕致纬
Owner UNIMICRON TECH CORP