Method for preparing all-organic field-effect transistor without via hole
An organic field and transistor technology, which is applied in the field of preparing all-organic field effect transistors without via holes, can solve the problems that the gate dielectric via hole process is not well controlled and the effect is not very good, and achieves the effect of ensuring performance and simplifying the process flow
Active Publication Date: 2011-07-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
For the organic gate dielectric, the via process of the gate dielectric is not well controlled, and the effect is not very good
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[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0025] The method for preparing the non-via-hole all-organic field-effect transistor provided by the present invention successfully avoids the difficult via-hole process in device preparation in combination with the spin-coating characteristic of the organic gate dielectric. The core idea of this method is to use the characteristics of the small edge slope after the gate dielectric is spin-coated to allow the electrode wiring to directly cover the edge of the gate dielectric to realize the lead-out and interconnection of the electrodes. In this way, the process step of etching the gate dielectric to form the via hole is omitted.
[0026] like figure 1 as shown, figure 1 It is a flow chart of a method for preparing an ...
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The invention discloses a method for preparing an all-organic field-effect transistor without a via hole, comprising the following steps: cleaning a flexible plastic substrate; using photoetching and stripping technologies to prepare the gate electrode of a device on the plastic substrate; coating organic gate dielectric on the gate electrode by contact micro-zone spin coating in a device area; baking the organic gate dielectric, and photoetching the graphics of source and drain electrodes on the organic gate dielectric; evaporating and depositing metal electrodes again, and an electrode leadwire directly striding over the edge of the gate dielectric from the source and drain electrodes to be connected with the plastic substrate; stripping photoresist to obtain the electrode diagram of adiagrammatic all-organic field-effect transistor device; and vacuum evaporating and depositing an organic semiconductor layer to complete the manufacturing of the device. The method is utilized to becompatible with a mature photoetching technology on the process, avoids the process of via hole manufacturing in the technology process, and simplifies the technical process, therefore ensuring the performance of the device.
Description
technical field [0001] The invention relates to the technical field of microfabrication in organic semiconductors, in particular to a method for preparing all organic field-effect transistors without via holes. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work; in daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing. [0003] Traditional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements, so organic microelectronics technology based on organic polymer semiconductor materials that can achieve these characteristics has received more and more attention under this trend. Among them, the bendable flexible display composed of organic light-emitting diodes driven by all organic circuits has always been an important goal pursued in this field to improve the performa...
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IPC IPC(8): H01L51/40
Inventor 刘舸刘明刘兴华商立伟王宏柳江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI