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Method for preparing sensitive material In2O3/Nb2O5/Pt for composite nanometer semiconductor C12

A nano-semiconductor and sensitive material technology, which is applied in the synthesis of Cl2 sensitive materials, can solve the problems of poor sensitivity, high power consumption, and large volume of sensitive materials, and achieve the effects of improved characteristics, low power consumption, and small volume

Inactive Publication Date: 2012-09-05
HARBIN UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention is to solve the poor sensitivity of the sensitive material made by the existing method, so that Cl 2 Sensors generally have the problems of high power consumption, large volume, and only low-concentration detection. However, a composite nano-semiconductor Cl 2 Sensitive material In 2 o 3 / Nb 2 o 5 / Pt preparation method

Method used

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  • Method for preparing sensitive material In2O3/Nb2O5/Pt for composite nanometer semiconductor C12
  • Method for preparing sensitive material In2O3/Nb2O5/Pt for composite nanometer semiconductor C12
  • Method for preparing sensitive material In2O3/Nb2O5/Pt for composite nanometer semiconductor C12

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specific Embodiment approach 1

[0020] Specific embodiment one: this embodiment composite nano semiconductor Cl 2 Sensitive material In 2 O 3 / Nb 2 O 5 The preparation method of / Pt is carried out according to the following steps:

[0021] 1. Weigh InCl according to the molar ratio of 18:1 3 ·4H 2 O and Nb 2 O 5 , The InCl weighed first 3 Completely dissolve in deionized water to obtain InCl 3 Solution, weighed Nb 2 O 5 Add to HNO with a volume concentration of 18-22% 3 In, after filtration, with InCl 3 The solution was stirred and mixed, and NaOH with a mass concentration of 22%-28% was added to adjust the pH value of the mixture to 7.8-8.2, and then stirred at 48-52℃ for 4.8-5.2h to obtain a co-deposition mixture, in which InCl 3 ·4H 2 The mass ratio of O to deionized water is 2.93∶500, Nb 2 O 5 With HNO 3 The mass ratio is 1:3;

[0022] 2. The co-deposition mixture is centrifuged at 3000-5000r / min for 20-30min, the supernatant is removed, and then the precipitate obtained by centrifugation is washed with deioniz...

specific Embodiment approach 2

[0034] Specific embodiment two: This embodiment is different from specific embodiment one in that: in step one, NaOH with a mass concentration of 25% is added to adjust the pH value of the mixture to 8. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0035] Specific embodiment three: This embodiment is different from specific embodiments one to two in that: in step one, it is stirred at 50° C. for 5 hours. The other steps and parameters are the same as those in the first to second embodiments.

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Abstract

The invention provides a method for preparing sensitive material In2O3 / Nb2O5 / Pt for a composite nanometer semiconductor C12, which relates to a method for synthesizing C12 sensitive material. The invention solves the problem that the sensitive material prepared by the traditional method has poor sensitivity, therefore, the C12 sensor commonly has high power consumption and large volume and only can do low-concentration detection. The method comprises the following steps of: mixing raw materials to obtain a co-settling mixture; centrifugalizing, filtering and drying; preparing an In2O3 / Nb2O5 nanometer powder; and preparing C12 sensitive material In2O3 / Nb2O5 / Pt. The composite nanometer semiconductor material In2O3 / Nb2O5 / Pt has good sensitivity on C12, therefore, the C12 sensor made by the C12 sensitive material In2O3 / Nb2O5 / Pt has the detecting range of 0-500ppm for C12, the power consumption is low, and the volume is small.

Description

Technical field [0001] The present invention relates to a Cl 2 Synthesis method of sensitive materials. Background technique [0002] In people's production and life Cl 2 It is an important chemical raw material as well as a highly toxic and hazardous chemical. Cl 2 It is highly oxidizing and corrosive. Leakage and explosion accidents in the transportation, storage, production and use links occur from time to time. Once a leak occurs, it will cause immeasurable loss of life and property. Pass Cl 2 Sensor pair Cl 2 Conduct online monitoring and testing, in which Cl is mainly used during use 2 Sensitive elements, the core of which is the preparation of sensitive materials, but Cl produced by existing methods 2 Poor sensitivity of sensitive materials makes Cl 2 Sensors generally have large power consumption and volume, which can only perform low-concentration detection (below 100ppm), which greatly limits Cl 2 The use of sensors. Summary of the invention [0003] The present inventio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 施云波赵文杰周真修德斌冯侨华何梦资
Owner HARBIN UNIV OF SCI & TECH
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