Capacitor

A technology of capacitors and silicon nitride layers, which is applied in the field of capacitors, can solve problems such as unstable capacitance values ​​of capacitors and affect normal operation of circuits, and achieve the effect of suppressing changes in capacitance values ​​with voltage and stabilizing capacitance values

Inactive Publication Date: 2010-07-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This situation causes the capacitance value of the capacitor to be unstable, thus affecting the normal operation of the circuit

Method used

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no. 1 Embodiment approach

[0026] attached image 3 Shown is a schematic structural diagram of a capacitor 200 in this specific embodiment, including a semiconductor substrate 210 , two capacitor plates 221 and 222 , an insulating layer 230 sandwiched between the two substrates, and electrode leads 241 and 242 . The insulating layer 230 includes three silicon oxide layers 231 , 233 and 235 , and three silicon nitride layers 232 , 234 and 236 . A partially enlarged schematic diagram of the insulating layer 230 is enclosed in a dotted line circle. The capacitor is disposed on the surface of the semiconductor substrate 210 . The surfaces of the capacitor plates 221 and 222 away from the insulating layer are provided with a first dielectric layer 250 and a second dielectric layer 260 to electrically isolate the capacitor plates 221 and 222 from the outside. The capacitor 200 also includes electrode leads 241 and 242 for realizing the electrical connection between the two capacitor plates 221 and 222 and ot...

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Abstract

The invention discloses a capacitor which comprises two capacitor polar plates and an insulating layer clamped between the two polar plates, wherein the insulating layer comprises a silicon oxide layer and a silicon nitride layer. The invention has the advantages that: the insulating layer of the capacitor comprises the silicon oxide layer and also the silicon nitride layer, thereby inhibiting the phenomenon that a capacitance value varies along with the voltage brought by singly adopting silicon oxide and silicon nitride, and the capacitor with stable capacitance value is obtained.

Description

【Technical field】 [0001] The invention relates to the field of integrated circuit manufacturing, in particular to capacitors. 【Background technique】 [0002] A capacitor is an important device in a semiconductor chip. In the prior art, a capacitor in a semiconductor chip usually adopts a "metal-insulator-metal" (Metal-Insulator-Metal: MIM) structure. [0003] attached figure 1 Shown is a schematic structural diagram of a capacitor 100 in the prior art, including a semiconductor substrate 110, two capacitor plates 121 and 122, and an insulating layer 130 sandwiched between the two substrates. The capacitor plates 121 and 122 are made of metal, such as aluminum or copper. The insulating layer 130 is made of silicon oxide or silicon nitride. The surfaces of the capacitor plates 121 and 122 away from the insulating layer are provided with a first dielectric layer 150 and a second dielectric layer 160 to electrically isolate the capacitor plates 121 and 122 from the outside. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/08
Inventor 邹晓东
Owner SEMICON MFG INT (SHANGHAI) CORP
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