Method for manufacturing memory module by using defect list of electrically-erasable programmable read-only memory

Abstract

The invention provides a method for manufacturing a memory module by using a defect list of an electrically-erasable programmable read-only memory. In the method, the memory module is manufactured by welding a partially-good dynamic random access memory chip on a memory module base plate; the partially-good dynamic random access memory chip is provided with defect memory units, of which the number is smaller than a detection threshold value(for example 10 percent); the packaged dynamic random access memory chips are randomly pre-screened, and when the number of defected ones is smaller than the detection threshold value, the detection is passed; during the detection period, a defect list is generated and written in a serial presence detection electrically-erasable programmable read-only memory of the memory module; and when a machine is started, a target system detector reads the defect list, the memory module performs the final detection on the target system detector and redirects the positions of the defect memories identified in the memory access defect list. The memory can complete the detection by burning or at different temperatures and voltages, so that the reliability of the memory is improved.

Description

technical field [0001] The present invention generally relates to the manufacture of memory modules. More specifically, the present invention relates to the fabrication of memory modules from a fraction of good memory chips. Background technique [0002] Memory modules are widely used in various electronic systems, especially in personal computers. The memory modules are built following the rules set by industry standards to ensure a large potential market. High-volume production and competition have drastically reduced the cost of modules, thereby benefiting buyers of various electronic systems. [0003] Memory modules can be manufactured into a variety of different sizes and capacities, such as the old 30-pin and 72-pin single-inline memory modules (single-inline memory module, SIMM) and the new 168-pin, 184-pin Dual inline memory module (DIMM) with pins and 240 pins. These pins are the original pins extending from the edge of the module with metal contact pads or lead...

AI Technical Summary

Problems solved by technology

The step of inserting and removing the DRAM chip into and out of the detection socket on the memory chip burn-in board 106 can be performed manually, but this step is cumbersome and time-consuming

[0023] The disadvantage of the burn-in program is that each memory module with 8 DRAM chips needs 8 insertions and 8 removals. In other words, a module with 8 DRAM chips requires a total of 16 insertions. / remove step

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