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Plasma treating apparatus and method, and focus ring

A plasma and processing device technology, which is applied in the fields of plasma processing devices and focus rings to achieve the effect of reducing the generation of deposits

Active Publication Date: 2010-08-18
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, even if the spread of the plasma is suppressed by utilizing the potential difference between the periphery of the semiconductor wafer and the inner periphery of the focus ring, so-called deposition, in which CF-based polymers and the like adhere to the lower surface of the periphery of the semiconductor wafer, may occur.

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  • Plasma treating apparatus and method, and focus ring
  • Plasma treating apparatus and method, and focus ring
  • Plasma treating apparatus and method, and focus ring

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Embodiment Construction

[0068] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory diagram showing a schematic configuration of a plasma processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is an enlarged longitudinal sectional view of the focus ring 25 included in the plasma processing apparatus 1 . In addition, in this specification and drawings, the structural element which has substantially the same functional structure is denoted by the same code|symbol, and repeated description is abbreviate|omitted.

[0069] Inside the airtight cylindrical processing chamber 10, a mounting table 11 serving also as a lower electrode for mounting a semiconductor wafer W as a substrate to be processed is disposed. The processing chamber 10 and the mounting table 11 are made of a conductive material such as aluminum, for example. However, the stage 11 is supported on the bottom surface of the processi...

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Abstract

A plasma processing apparatus, a focus ring, and a focus ring part and a plasma processing method are provided to suppress that the plasma enters into the peripheral part of the semiconductor wafer by forming the electric potential difference. A plasma processing apparatus(1) includes a focus ring(25) that surrounds the surrounding of substrate mounted on main chucks(11). The focus ring comprises an outer ring part which is arranged outside the surrounding of substrate, and is made of the conductive material; an inner ring portion which is made of the conductive material, and arranged at the lower part of the peripheral part of substrate. The difference between the outermost periphery of inner ring portion and the outer periphery of substrate is 2 to 2.5mm.

Description

[0001] This case is filed on March 16, 2007 , the application number is 200710088375.8 , the name of the invention is plasma treatment Apparatus and method and focus ring divisional application of the patent application. technical field [0002] The present invention relates to a plasma processing apparatus and a plasma processing method for performing plasma processing such as etching on a substrate to be processed such as a semiconductor wafer, and to a focus ring and a focus ring member used in the plasma processing apparatus. Background technique [0003] Conventionally, plasma processing apparatuses for performing plasma processing such as etching using plasma generated by application of a high-frequency voltage have been widely used, for example, in the manufacturing process of microcircuits in semiconductor devices. In such a plasma processing apparatus, a semiconductor wafer is arranged in a processing chamber whose interior is hermetically sealed, plasma is gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32642H01L21/67069
Inventor 舆石公
Owner TOKYO ELECTRON LTD