Forming method of MOS (Metal Oxide Semiconductor) transistor and threshold voltage regulating method thereof

Abstract

The invention discloses a forming method of an MOS (Metal Oxide Semiconductor) transistor and a threshold voltage regulating method thereof. The forming method of the MOS transistor comprises the following steps of: directly carrying out ion implantation on a semiconductor substrate to form an ion diffusion region used for regulating the threshold voltage; forming a grid structure on the semiconductor substrate; carrying out ion implantation at both sides of the grid structure in the semiconductor substrate so as to form a bag-shaped implantation region, a source extension region, a drain extension region, a source electrode and a drain electrode; and annealing the semiconductor substrate, wherein the energy and the dosage of implanted ions for forming the ion diffusion region are determined according to the threshold voltage of the MOS transistor. In the method, an extra photomask is not needed to be added for independently carrying out the parallel regulation of the threshold voltage of devices in different sizes, thereby simple and flexible regulation of the threshold voltage is realized, the process period of the manufacture procedure is shortened and the cost is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a MOS transistor and a method for adjusting a threshold voltage thereof. Background technique [0002] At present, due to the increasing integration of integrated circuits, the size of devices is getting smaller and smaller, and the feature size (CD) of devices is developed from 0.13 μm to below 0.10 μm. Metal-oxide-semiconductor (MOS) devices are the main driving force as semiconductor devices move toward high density and small size. Threshold voltage (Vt) and drive current (Id) are two important electrical parameters of MOS transistors, and are also important control parameters in the manufacturing process. Different core circuits (Core) and input / input / output circuits (IO) have different Vt and Id performance requirements. [0003] In the prior art, the doping shape of the gate oxide layer, channel region, well region, source / drain ex...

AI Technical Summary

Problems solved by technology

The most common way is to change the ion implantation type, energy and dose, and to change the thickness of the gate oxide layer, but no matter which method, you need to use a photomask. In this way, different photomasks will be used to define different device regions. , making the manufacturing process of the entire MOS transistor more complicated

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