Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-Curie-point low-resistivity lead-free PTCR (Positive Temperature Coefficient of Resistance) ceramic material and preparation method thereof

A low-resistivity, ceramic material technology, applied in the BaTiO3-based high Curie point low-resistivity lead-free PTCR ceramic material and its preparation field, can solve the problems of Bi element volatilization, material chemical ratio deviation, and sodium ion loss, etc. Achieve the effects of avoiding grain growth and agglomeration, obvious diffraction peak intensity, and high powder sintering activity

Inactive Publication Date: 2013-02-13
HUAZHONG UNIV OF SCI & TECH +1
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned materials have high resistivity, small lift-to-drag ratio, and poor overall PTC effect, which cannot meet the technical requirements of low-voltage applications (such as low-voltage electrical appliances such as automotive air conditioners)
[0005] Generally all adopt traditional solid phase sintering method (comprising Chinese invention patents such as above-mentioned CN10128473A, CN 101284731A) aspect preparation technology, in initial mixing, generally all adopt deionized water as medium to carry out wet ball milling, because sodium salt belongs to Water-soluble salts can easily cause the loss of sodium ions during the ball milling process, resulting in the deviation of the chemical ratio of the material
At the same time, due to the high synthesis temperature (about 1000°C), the Bi element is extremely volatile, which will also lead to deviations in the chemical ratio of the material.
For perovskite (ABO 3 ) structure (Bi 0.5 Na 0.5 ) x (Ba 1-x )TiO 3 Due to the loss of sodium ions and the volatilization of Bi elements, a large number of A-site ion vacancies will be generated, as a result, high-concentration acceptor impurities will be formed, which will affect the semiconductorization of materials, and it is difficult to obtain PTC materials with low resistivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-Curie-point low-resistivity lead-free PTCR (Positive Temperature Coefficient of Resistance) ceramic material and preparation method thereof
  • High-Curie-point low-resistivity lead-free PTCR (Positive Temperature Coefficient of Resistance) ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] The preparation method of the semiconductor ceramic material involved in the present invention includes batching, polymer in-situ solidification to prepare gel, low-temperature synthesis to prepare nano-powder satisfying chemical dosage ratio, and low-temperature firing to prepare lead-free PTCR ceramics with high Curie point and low resistivity. Specific steps are as follows:

[0031] 1. Prepare the solution

[0032]The initial raw materials are all related metal oxides with a purity of 99.8% and above, such as Bi 2 o 3 、Sm 2 o 3 、Nd 2 o 3 , Y 2 o 3 , La 2 o 3 etc.; or carbonates such as BaCO 3 , CaCO 3 , SrCO 3 、Na 2 CO 3 、K 2 CO 3 etc.; or metal alkoxides such as butyl titanate Si(OC 2 h 5 ) 4 , Ti(OC 4 h 9 ) 4 and other raw materials. Prepare a mixed solution containing Bi, Na, K, Ba, Ti, Ln, Cn, Si, Mn and other ions according to the molar ratio given in formula ①.

[0033] A preferred mode is listed below to illustrate the preparation proce...

Embodiment 1

[0051] 1. Prepare the solution

[0052] Prepare solutions containing Bi, Na, K, Ba, Ti, Sm, Ca, Si, Mn and other ions respectively:

[0053] Press Bi 2 o 3 : nitric acid=1:7 molar ratio, weigh Bi 2 o 3 and nitric acid, dilute with deionized water in nitric acid, and then dilute the diluted solution with Bi 2 o 3 Mix, heat to 80°C, stir, after the reaction is complete, get the 3+ solution, and add ammonia to pH 7;

[0054] Na 2 CO 3 、K 2 CO 3 Deionized water was added to form an aqueous solution.

[0055] By BaCO 3 : Molar ratio of citric acid=1:4, weighing barium carbonate BaCO 3 with citric acid. First, deionized water was added to citric acid to prepare a citric acid solution, and then the citric acid solution was mixed with BaCO 3 After mixing, after the reaction is completed, a 2+ solution, and add ammonia to pH 7;

[0056] Butyl titanate Ti(OC 4 h 9 ) 4 : citric acid=1:1.1 weight ratio, weigh butyl titanate Ti(OC 4 h 9 ) 4 and citric acid, adding de...

Embodiment 2

[0072] 1. Prepare the solution

[0073] Solutions containing Bi, Na, K, Ba, Ti, Y, Ca, Si, Mn ions were prepared respectively.

[0074] Press Bi 2 o 3 : nitric acid=1:6 molar ratio, weigh Bi 2 o 3 and nitric acid, dilute with deionized water in nitric acid, and then dilute the diluted solution with Bi 2 o 3 Mix, heat to 82°C, stir, after the reaction is complete, get the 3+ solution, and add ammonia to pH 8;

[0075] Na 2 CO 3 、K 2 CO 3 Deionized water was added to form an aqueous solution.

[0076] By BaCO 3 : Molar ratio of citric acid=1:3, weighing barium carbonate BaCO 3 with citric acid. First, deionized water was added to citric acid to prepare a citric acid solution, and then the citric acid solution was mixed with BaCO 3 After mixing, after the reaction is completed, a 2+ solution, and add ammonia to pH 8;

[0077] Butyl titanate Ti(OC 4 h 9 ) 4 : citric acid=1:1 weight ratio, weigh butyl titanate Ti(OC 4 h 9 ) 4 and citric acid, adding deionized...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Curie pointaaaaaaaaaa
Curie pointaaaaaaaaaa
Curie pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-Curie-point low-resistivity lead-free PTCR (Positive Temperature Coefficient of Resistance) ceramic material with a constitution formula (1): [Bi0.5(Na1-xKx)0.5]y[Ba1-y-z-j]TiO3+zLn3++jCn2++kSi2++wMn(NO3)2. In the formula, x is equal to 0.1-0.5, y is equal to 0.1-0.3, z is equal to 0.001-0.01, j is equal to 0.1-0.2, k is equal to 0.01-0.05, w is equal to 0.0001-0.001, Ln comprises one or two elements of Sm, Nd, Y and La, and Cn comprises at lest one of Ca and Sr. The preparation method comprises the following steps of: (1) respectively preparing solutions containing Bi, Na, K, Ba, Ti, Ln, Cn, Si and Mn ions and preparing a mixed solution according to a mol ratio given in formula (1); (2) mixing the mixed solution, organic monomers and a crosslinking agent according to a proportion of 100ml: (6-20)g: (0.5-8)g and crosslinking and polymerizing the organic monomers and the crosslinking agent in the solution to obtain gel; (3) calcining at 700-800 DEG C for 1-3h to obtain ceramic powder; and (4) granulating the powder, drily pressing to form and calcining at a high temperature of 1200-1300 DEG C for 1-2h. The ceramic material has the advantages of high Curie point and low resistivity.

Description

technical field [0001] The invention belongs to the technical field of functional ceramic materials, in particular to a BaTiO 3 The invention discloses a lead-free PTCR ceramic material with a high Curie point and low resistivity and a preparation method thereof. Background technique [0002] PTCR generally refers to a thermistor material or component with a positive temperature coefficient. A typical PTCR material is a semiconductor ceramic material based on barium titanate. Its characteristic is that when the ambient temperature rises to a certain temperature (Curie point or switch temperature point), its resistance value will increase by several orders of magnitude. Using this material as a heating body, its heating power hardly changes with the change of the applied voltage, so it has the function of automatic constant temperature. At the same time, it is widely used in industrial and military electronic equipment, as well as household appliances and other fields becau...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/468C04B35/624
Inventor 周东祥龚树萍赵俊邱传贡
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products