TFT substrate with higher carrier transmission characteristics and preparation method thereof

Abstract

The invention discloses a silicon film with higher carrier transmission characteristics and a preparation method thereof, which relate to the technical field of vacuum coating. The silicon film comprises an amorphous silicon film and CdTe, or CdSe, or CdS and other non-linear resistance materials doped in the amorphous silicon film, and is prepared through a PEVCD technology. PECVD equipment is provided with a plurality of circuits of gas access devices, can simultaneously lead in a plurality of types of gases into a reaction chamber of the equipment for the growth of the doped amorphous silicon film. The invention can ensure that the doped amorphous silicon film is tight and has uniform thickness. Not only the invention improves the carrier mobility of the amorphous silicon film, but also the TFT which is prepared from the amorphous silicon film has equal performance to the TFT which is prepared from low-temperature polysilicon, the preparation cost of a TFT substrate can be greatly reduced, and preparation processes related to TFT are simplified.

Description

technical field [0001] The present invention relates to a kind of amorphous silicon thin film with higher carrier transport characteristic used for preparing thin film transistor (TFT), and the method for preparing this thin film, the amorphous silicon TFT prepared by this thin film is especially suitable for Drive organic electroluminescent devices (OLEDs). Background technique [0002] Generally, there are three types of TFT substrates used to prepare and drive OLEDs, including amorphous silicon TFT substrates, low temperature polysilicon TFT substrates and single crystal silicon TFT substrates. The first two types of substrates are TFTs made directly on glass substrates, while the single crystal silicon TFT substrates are TFTs made on single crystal silicon wafers. Among them, the amorphous silicon TFT substrate has the advantages of relatively simple preparation process, relatively small investment in equipment, and relatively low preparation cost. [0003] The OLED de...

AI Technical Summary

Problems solved by technology

The low-temperature polysilicon film prepared by MILC cannot completely remove the metal particles, and the photoelectric performance of the TFT produced by it cannot meet the requirements for the normal operation of OLED devices.

[0004] At present, the low-temperature polysilicon TFT substrates used in the active OLED products sold on the market are all realized by the excimer laser annealing method. This method has the following disadvantages for preparing low-temperature polysilicon thin films: First, the price of ELA equipment Very expensive, the price of an ELA production equipment is probably more than tens of millions of dollars, resulting in an increase in the preparation cost of low-temperature polysilicon thin film substrates

Second, it takes a long time to crystallize amorphous silicon thin films by ELA method, which increases the preparation cycle of low-temperature polysilicon thin film substrates, and the production capacity of corresponding production lines will be affected

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