Plasma enhanced chemical vapor deposition device

Abstract

The invention provides a plasma enhanced chemical vapor deposition (PECVD) device which comprises a uniform stream chamber and a process chamber that are arranged in a chamber, wherein the uniform stream chamber is positioned above the process chamber, the upper part of the uniform stream chamber is provided with an air inlet and the lower part is provided with a spraying plate with spraying holes, the lower part of the process chamber is provided with a lower electrode, the peripheral wall of the uniform stream chamber is connected with a power supply, the lower electrode and the peripheral wall of the chamber are connected with the ground, and a cleaning electrode is arranged in the uniform stream chamber and selectively connected with the power supply or ground through a switch device.The cleaning electrode is arranged in the uniform stream chamber, the cleaning electrode is grounded and a cleaning gas is introduced, a plasma generates in the uniform stream chamber, polluted particles in the uniform stream chamber are effectively eliminated and removed, in situ dry method cleaning of the uniform stream chamber is realized without influencing normal work and process of the PECVD device, the service life of the PECVD is prolonged and the quality of workpiece deposition is improved.

Description

technical field [0001] The invention relates to plasma-enhanced chemical vapor deposition equipment, more specifically, to a novel plasma-enhanced chemical vapor deposition device with self-cleaning function. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD for short) equipment is widely used in semiconductor industry and solar cell manufacturing process to deposit various thin films, such as silicon nitride thin film, transparent conductive thin film, solar anti-reflection film Wait. For example, in the manufacturing process of solar cells, plasma-enhanced chemical vapor deposition equipment is used, especially in the manufacturing process of large-area crystalline silicon solar cells. In the manufacturing process of solar cells, PECVD equipment is The equipment for preparing anti-reflection film, the schematic diagram of the working principle of PECVD is as follows figure 1 As shown: the upper electrode is connected to the power supply, the ...

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Problems solved by technology

When the process gas passes through the uniform flow chamber 2, due to the certain temperature in the uniform flow chamber 2, the process gas will produce the usual chemical vapor deposition (Chemical Vapor Deposition, CVD for short), such as the formation of silicon nitride, etc. The temperature in the flow chamber 2 is lower than that in the process chamber 3, and the CVD is easy to form particulate matter (referred to as pollution particles in the industry) at a lower temperature. The surface will be covered with a layer of non-dense, granular substances, and these particles will fall on the workpieces to be processed in the process chamber 3, such as silicon wafers, etc., through the spray holes 221 on the spray plate 22, thereby affecting the process. PECVD process results in chamber 3 and the product quality of the workpiece, which can have adverse effects, e.g. in the solar field, can affect the efficiency of the cell

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