Reliable contact

Abstract

The invention discloses a nickel based germanide contact which comprises a processing material, wherein the processing material inhibits nickel based germanide from agglutinating in the process of forming the contact and the processes after the germaniding process. The processing material, which exists or is combined in the nickel layer used for forming a nick based contact in a mode of a covering layer on a nickel layer; and since agglutination is reduced, the electrical characteristic of the contact is improved.

Description

[0001] The present invention generally relates to the formation of germanide contacts for use in integrated circuits (ICs). More particularly, the invention relates to the improved formation of nickel-germanide contacts for use in integrated circuits. Background technique [0002] figure 1 A portion 100 of a conventional CMOS IC is represented. This part includes first and second complementary transistors 120 and 140 formed on a silicon substrate 101 . The first transistor is an n-MOS transistor formed on the deep p-doped well 121 , while the second transistor is a p-MOS transistor formed on the deep n-doped well 141 . The shallow p-doped well 122 is under the n-MOS transistor, while the shallow n-doped well is under the p-MOS transistor 142 . Shallow trench isolations 160 are used to isolate transistors. Each transistor includes a source electrode (123 or 143), a drain electrode (124 or 144), and a gate electrode (125 or 145). For n-MOS transistors, the source, drain and...

AI Technical Summary

Problems solved by technology

This is because relatively high annealing temperatures are required to form titanium or cobalt junctions with good electrical properties such as low resistance, which is not good for germanium-based applications

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