Rectangular planar magnetic control target with alternate electromagnetic field
A magnetic control target and electromagnetic field technology, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of poor magnetic stability of permanent magnets and low utilization rate of targets, and achieve optimal cost performance and extended replacement. Target cycle, effect of reducing target cost
Inactive Publication Date: 2011-01-05
赫得纳米科技(昆山)有限公司
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Problems solved by technology
[0003] In order to solve the limitations of the magnetic field distribution and horizontal field strength of the permanent magnet in the rectangular planar magnetron target in the prior art, resulting in low target utilization and poor magnetic stability of the permanent magnet, the present invention provides a structure Simple, easy to use, rectangular planar magnetron target with alternating electromagnetic field that can increase target utilization
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[0013] as the picture shows, figure 1 It is a structural schematic diagram of a permanent magnet in a rectangular planar magnetron target in the prior art; figure 2 It is a schematic diagram of the target body structure of a rectangular planar magnetron target in the prior art; image 3 It is a schematic diagram of the structure of the target body after the consumption of the rectangular planar magnetron target in the prior art; Figure 4 It is a schematic diagram of the distribution structure of the alternating electromagnetic field of the rectangular planar magnetron target of the present invention; Figure 5 It is a structural schematic diagram of a rectangular planar magnetron target with an alternating electromagnetic field in the present invention; Figure 6 It is a schematic diagram of the target body structure after consumption of the rectangular planar magnetron target of the present invention.
[0014] The present invention will be further described below in conj...
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The invention discloses a rectangular planar magnetic control target with alternate electromagnetic field, relating to the technical field of a sputtering coating device. The rectangular planar magnetic control target comprises a target body, and is characterized by further comprising a magnetic body. The magnetic body is arranged on the upper part of the target body, the magnetic body comprises two sets of electromagnets which are arranged in cross mutually. The invention solves the problems that the limitations of the magnetic field distribution and the horizontal field limitation of the permanent magnet in the rectangular planar magnetic control target of the prior art cause the lower target use ratio as much as about 30%, and the stability of the permanent magnet is poor. The invention provides a rectangular planar magnetic control target having alternate electromagnetic field with simple structure, convenient use and increased use ratio of the target. The use ratio of the target can be enhanced to about 65%, the target cost is reduced, the service life of the target is prolonged and the halt time is shortened. The electromagnet used in the invention can not generate the demagnetization in use, thereby stabilizing the product quality and saving the cost.
Description
technical field [0001] The invention relates to the technical field of sputtering coating equipment, in particular to a rectangular planar magnetron target structure with an alternating electromagnetic field. Background technique [0002] After half a century of development, modern thin film technology has been applied in various fields of national economy. High-speed and low-temperature sputtering coating equipment has been widely used in various industries, and it can deposit films of any coating material on any substrate. Rectangular planar targets currently used in the market, such as figure 1 As shown, the magnet of this target adopts a permanent magnet (strontium ferrite or AlNiCo, etc.), and the rectangular planar target has a simple structure and strong versatility. However, due to the limitations of the magnetic field distribution and horizontal field strength during actual use, such as figure 2 and 3 As shown, the target utilization rate is extremely low, only...
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IPC IPC(8): C23C14/35
Inventor 黄国兴
Owner 赫得纳米科技(昆山)有限公司