Method for modifying parameters for fuse-class wafer

Abstract

The invention relates to a method for modifying parameters for a fuse-class wafer, comprising the following steps of: initializing variables beta and i, and creating an ephemeral data file; i=i+1; judging whether i is not greater than L or not, if yes, executing the next step, and if not, ending the parameter modification of the fuse-class wafer of the batch; measuring the initial value Vinit_i of the ith integrated circuit parameter; judging whether the number of the modified values of the parameters stored in the ephemeral data file is equal to N or not, if yes, calculating a difference value Vtrim_1, wherein Vtrim_1=Vinit_i-Vtarget+beta, beta=Vtarget-Vave_i, and Vave_i is equal to the average value of the modified values of N parameters in the ephemeral data file; if not, calculating the difference value Vtrim_i, and Vtrim_i=Vinit_i-Vtarget; selecting the fuse combination the modified theoretical value of which closely approaches the difference value Vtrim_1 as a fuse combination to be modified, and fusing a corresponding fuse by a fusing circuit; measuring the modified value of the ith integrated circuit parameter, and judging whether the modified value of the parameter meets the demand or not; and updating the data in the ephemeral data file, and returning to the step of i=i+1.

Description

technical field [0001] The invention relates to wafer testing, in particular to a method for trimming parameters of a fuse-type wafer. Background technique [0002] When using special equipment to test the analog integrated circuit or hybrid integrated circuit on the wafer, it is often necessary to adjust the parameters of the analog integrated circuit or the analog part of the hybrid integrated circuit. Trimming parameters is to trim the fuses to select different internal circuits so that the parameters reach the target range, so this type of wafer that needs to trim parameters is called a fuse-type wafer. [0003] In the prior art, adjusting parameters of an integrated circuit on a fuse type wafer includes the following steps: [0004] Step 1, measuring the initial value of the parameters of the integrated circuit on the wafer before trimming the fuse; [0005] Step 2, select the fuse combination to be repaired, and blow the corresponding fuse by the fuse circuit; [00...

AI Technical Summary

Problems solved by technology

[0011] In the mass production test of fuse wafers, it was found that due to the change of the central value of the initial value distribution curve of the parameters and the difference in the combination error of each group of fuses, In the existing technology, the test yield fluctuation between different wafers in the same batch is too large, and the overall test yield of the same batch is low.

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