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Mask picture modification method, mask manufacturing method and optical proximity correction method

An optical proximity correction and reticle technology, applied in the field of lithography, can solve the problems of complex implementation and large amount of calculation, and achieve the effect of expanding the process window and prohibiting the optical space period

Inactive Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method needs to select appropriate weighting items and perform data matching on the weighted results, and also needs to traverse all the patterns to obtain a correction rule applicable to the entire graph, which requires a large amount of calculation and complex implementation.

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  • Mask picture modification method, mask manufacturing method and optical proximity correction method
  • Mask picture modification method, mask manufacturing method and optical proximity correction method
  • Mask picture modification method, mask manufacturing method and optical proximity correction method

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Embodiment Construction

[0023] From figure 2 In the schematic diagram of the process window shown, it can be found that since the process window 202 is inscribed on the curve 203 and circumscribed on the curve 204, and the percentage of the difference between E0 and E1 in E0 is the exposure tolerance, at the center point and the exposure Under the premise of a certain tolerance, increase the curve corresponding to the dense pattern with higher exposure energy, that is, increase the exposure energy required by the dense pattern, or reduce the curve corresponding to the iso pattern with lower exposure energy, that is, reduce The exposure energy required by the iso pattern will help expand the process window.

[0024] Based on this, the inventor, after repeated experiments and combined with the process characteristics of lithography and the principle of optical imaging, found that on the basis of not changing other process conditions and lithography equipment, by rotating the position of the dense patt...

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Abstract

The invention provides a mask picture modification method, a mask manufacturing method and an optical proximity correction method. The mask picture modification method comprises the following steps: checking the test patterns of the mask picture to obtain the pattern to be modified; rotating the pattern to be modified a preset angle so that the exposure energy needed by the pattern to be modifiedis increased compared with that before rotation; and combining the rotated pattern to be modified with other patterns in the test patterns of the mask picture to form a new mask picture. The invention realizes expansion of the process window and the forbidden pitch by rotating the pattern to be modified which is selected from the test patterns of the mask picture.

Description

technical field [0001] The invention relates to photolithography technology, especially a mask layout correction method, a mask plate manufacturing method and an optical proximity correction (OPC) method. Background technique [0002] With the rapid development of integrated circuit design, the size of the mask layout is shrinking day by day, and the optical proximity effect is becoming more and more obvious. The formed pattern will be distorted and deviated compared to the mask layout. Optical proximity correction (OPC) is a correction method commonly used in the industry to suppress the negative effects of the optical proximity effect. By adjusting the shape of the pattern, the deviation of the lithographic pattern obtained by exposure can be reduced, thereby improving the yield of chip production. [0003] In the mask layout test pattern, the optical effect of each pattern or its components is not only related to its own shape, but also involves the limitation of its sur...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
Inventor 张飞
Owner SEMICON MFG INT (SHANGHAI) CORP