Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for extracting simulation program with integrated circuit emphasis (SPICE) model of field effect transistor

A field effect transistor and model technology, which is applied in the field of extracting SPICE models of field effect transistors, can solve the problems of discontinuous parameters, high accuracy of regional models of general models, discontinuity of drain-source current parameters, drain-source conductance parameters GDS, etc. achieve high precision

Active Publication Date: 2015-05-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general model is a scalable model (Scalable model), which can be applied to all sizes of devices, but the accuracy of the general model is not as high as that of the regional model, especially in sub-micron devices
Although the regionalization model is a good choice for establishing a SPICE model, the parameters extracted by using the regionalization model are discontinuous, such as the extracted drain-source current parameter IDS and drain-source conductance parameter GDS are discontinuous

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for extracting simulation program with integrated circuit emphasis (SPICE) model of field effect transistor
  • Method for extracting simulation program with integrated circuit emphasis (SPICE) model of field effect transistor
  • Method for extracting simulation program with integrated circuit emphasis (SPICE) model of field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0022] see figure 1 , figure 1 It is a flowchart of the method for extracting the SPICE model of the field effect transistor of the present invention. First, on the basis of the general model, devices with long channel region, wide channel region and short channel with narrow channel region are called. see figure 2 , figure 2 It is a schematic diagram of the size distribution of the device extracted on the basis of the general model in the present invention. Preferably, on the basis of the general model, the channel widths of the devices in the wide channel region are the same, but the channel lengths are different. For the convenience of description, the devices in this region are defined as L devices. Preferably, on the basis of the general model, the cha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for extracting an SPICE model of a field effect transistor, which comprises the following steps of calling long channel region devices, wide channel region devices, and short channel and narrow channel region devices on the basis of a universal model; respectively extracting the model parameters of the long channel region devices, the wide channel region devices, and the short channel and narrow channel region devices by utilizing a parameter extraction method of a regionalization mode and obtaining the model parameters of the long channel region devices, the wide channel region devices, and the short channel and narrow channel region devices by utilizing a least square error fitting method on the basis of the universal model; and extracting the universal model parameters of the field effect transistor according to the model parameters of the long channel region devices, the wide channel region devices, and the short channel and narrow channel region devices. The method for extracting the SPICE model of the field effect transistor simultaneously has the advantages of the universal model and the regionalization model.

Description

technical field [0001] The invention relates to a method for extracting a SPICE model of a field effect transistor. Background technique [0002] A field effect transistor (Metal Oxide Semiconductor, MOS) is an important semiconductor device in a semiconductor integrated circuit, and is widely used in the field of integrated circuit technology. In order to predict the performance and reliability of field effect transistor devices in their environment, simulation of field effect transistors is required. [0003] SPICE (Simulation Program with Intergraded Circuit Emphasis) is the most commonly used circuit-level simulation program in the device design industry. Various software manufacturers provide different versions of SPICE software such as Vspice, Hspice, and Pspice. The simulation cores of these software are similar, and they all use California, USA A SPICE simulation algorithm developed at the University of Berkeley. Usually SPICE software provides a general model (Glo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 余泳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP