Method for extracting simulation program with integrated circuit emphasis (SPICE) model of field effect transistor
A field effect transistor and model technology, which is applied in the field of extracting SPICE models of field effect transistors, can solve the problems of discontinuous parameters, high accuracy of regional models of general models, discontinuity of drain-source current parameters, drain-source conductance parameters GDS, etc. achieve high precision
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[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0022] see figure 1 , figure 1 It is a flowchart of the method for extracting the SPICE model of the field effect transistor of the present invention. First, on the basis of the general model, devices with long channel region, wide channel region and short channel with narrow channel region are called. see figure 2 , figure 2 It is a schematic diagram of the size distribution of the device extracted on the basis of the general model in the present invention. Preferably, on the basis of the general model, the channel widths of the devices in the wide channel region are the same, but the channel lengths are different. For the convenience of description, the devices in this region are defined as L devices. Preferably, on the basis of the general model, the cha...
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