Controllable self-clamping SensorFET composite vertical power device

A technology of power devices and power converters, applied in the electronic field, can solve problems such as device temperature rise and inability to discharge avalanche energy

Inactive Publication Date: 2011-12-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the device width of the SensorFET is usually much smaller than the width of the main switching device, the above-mentioned high-voltage SensorFET device faces the problem that it cannot effectively discharge the avalanche energy when the main switching device is turned off. At this time, the high-voltage SensorFET is placed in a high-voltage or / and high current conditions, the device temperature will rise rapidly

Method used

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  • Controllable self-clamping SensorFET composite vertical power device
  • Controllable self-clamping SensorFET composite vertical power device
  • Controllable self-clamping SensorFET composite vertical power device

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specific Embodiment approach 1

[0024] A controllable self-clamping SensorFET compound vertical power device, such as image 3 As shown, it includes a main switching tube of a power converter and a SensorFET device; the main switching tube and the SensorFET device of the power converter are integrated on the same P-type substrate 11 .

[0025] The SensorFET device is a vertical structure, including: P-type substrate 12, N - The drift region 13 is located on the P-type substrate 12 and the N - N between the drift region 13 + Buried layer 11; one located at N - In the drift region 13, one end is connected to the metal anode 3, and the other end extends into the N + Deep N-type contact region 10 of buried layer 11; one located at N - The N connected to the metal cathode electrode 5 in the drift region 13 + Region 6; by the deep N-type contact region 10, N + Buried layer 11, N - The N where the drift region 13 is connected to the metal cathode electrode 5 + Area 6 constitutes charging and current detecti...

specific Embodiment approach 2

[0028] A controllable self-clamping SensorFET compound vertical power device, such as image 3 As shown, it includes a main switching tube of a power converter and a SensorFET device; the main switching tube and the SensorFET device of the power converter are integrated on the same P-type substrate 11 .

[0029] The SensorFET device is a vertical structure, including: P-type substrate 12, N - The drift region 13 is located on the P-type substrate 12 and the N - N between the drift region 13 + Buried layer 11; one located at N - In the drift region 13, one end is connected to the metal anode 3, and the other end extends into the N + Deep N-type contact region 10 of buried layer 11; one located at N - The N connected to the metal cathode electrode 5 in the drift region 13 + Region 6; by the deep N-type contact region 10, N + Buried layer 11, N - The N where the drift region 13 is connected to the metal cathode electrode 5 + Area 6 constitutes charging and current detecti...

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Abstract

The invention discloses a controllable self-clamping SensorFET composite vertical power device, which belongs to the technical field of semiconductor power devices and power integrated circuits. In the device, a main switch tube of a power inverter and a SensorFET device are integrated on the same P-type substrate and have a shared anode (or shared metal anode) structure, wherein a clamping diodestring is arranged between a control electrode and the shared anode of the SensorFET device; and the main switch tube of the power inverter can be a vertical metal oxide semiconductor (MOS) compositedevice or the normal vertical MOS device. The controllable self-clamping SensorFET composite vertical power device provided by the invention can effectively discharge snow slide energy while providing a stable charge current for an internal circuit, so that a transient safe operating area of the SensorFET device is expanded. Moreover, the energy discharging amount and clamping time are controlledby connecting a clamping tube and a control grid area, so that the application of an intelligent power integrated circuit (IC) to a high-snow slide energy environment, such as an ignition area, is expanded.

Description

technical field [0001] The invention belongs to the field of electronic technology, and relates to semiconductor power device technology and power integrated circuit technology. Background technique [0002] The power integrated circuit is the interface circuit between the control circuit and the power load. Its simplest circuit includes a level shifter and a drive circuit. Its function is to convert the logic signal level output by the microprocessor into a drive signal sufficient to drive the load. level. Power integrated circuits appeared in the late 1970s. Due to single-chip integration, power integrated circuits reduce the number of components, interconnections and solder joints in the system, which not only improves the reliability and stability of the system, but also reduces the number of components in the system. power consumption, size, weight and cost. Be able to self-manage the working state, respond to emergencies and take corresponding countermeasures (called...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L27/02H01L29/06
CPCH01L29/402H01L29/0634H01L29/861
Inventor 李泽宏邓光平钱振华胡涛洪辛张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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