A structure and method for reducing flash memory standby power consumption

Abstract

The invention provides a structure for reducing the standby power consumption of the flash memory. The structure comprises a memory array, a row decoder, a column decoder and a voltage control circuit, wherein the column decoder is connected with the memory array through a bit line, and the row decoder is connected with the memory array through a word line. The structure is characterized in that the voltage control circuit is connected with the row decoder to reduce the standby power consumption of the row decoder; and the voltage control circuit is also connected with the column decoder to reduce the standby power consumption of the column decoder. After the structure is prepared, the substrate bias voltage of the pull-up unit of the start-up unit of the row decoder is increased by the voltage control circuit so as to reduce the threshold voltage; the substrate bias voltage of the start-up unit of the column decoder is increased by the voltage control circuit so as to reduce the threshold voltage; and the standby power consumptions of the row decoder and the column decoder are reduced so as to reduce the leakage power consumption of the flash memory during standby.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a structure and method for reducing the standby power consumption of a flash memory. Background technique [0002] Flash memory is an important storage device. Because flash memory can read, write and erase data multiple times, it also has high density, large capacity, low time-consuming read and write operations, non-volatility, and low power consumption. It is more and more widely used in personal computers, various digital electronic devices and other digital storage devices; in recent years, its technology has become more mature, the cost price has gradually decreased, and the back-end application technology has become more and more perfect. All of these have greatly stimulated the development of the flash memory market, making it gradually take the same place as the hard disk in the storage field. In the process of flash memory production, due to process and other i...

AI Technical Summary

Problems solved by technology

When the flash memory is in standby, the capacity of the flash memory is very large, and the row decoding and column decoding circuits of the flash memory are complex, so when the flash memory enters the standby state, both the row decoding circuit and the column decoding circuit should be in the off state, but the actual process After the production is completed, there will be leakage problems in the row decoding circuit and column decoding circuit, and the complicated row decoding circuit and column decoding circuit may cause a large amount of leakage power consumption

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