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Nonrolatile storage system capable of reducing filter capacitor

A memory system, non-volatile technology, applied in the field of memory systems, to achieve the effect of reducing chip area and reducing filter capacitance

Active Publication Date: 2015-06-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is often a contradiction between the drive capability and the matching of the filter capacitor

Method used

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  • Nonrolatile storage system capable of reducing filter capacitor
  • Nonrolatile storage system capable of reducing filter capacitor
  • Nonrolatile storage system capable of reducing filter capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Charge pump and Flash or EEPROM system in the embodiment of the present invention are in original system (such as figure 1 , figure 2 , image 3 Shown) on the basis of the main changes for the charge pump (such as Figure 4 Shown): In the charge pump, each stage of the circuit adds a switch circuit for the capacitor Ct, selects the actual capacitor to adjust the drive capability of the charge pump, and leads the control signal (en, enb); the lead reflects the difference between Flash or EEPROM The signal of the operation mode (Mode); design the control circuit, and generate the correct en and enb signals according to the design according to the specific operation mode Mode; according to Figure 5 The method shown connects the corresponding modules, so that the appropriate drive capability can be selected according to different operating modes.

[0013] In this way, in all selection modes, Ct=CtO+Ctc, the driving capability meets the requirements of this mode, and n...

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PUM

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Abstract

The invention discloses a nonrolatile storage system capable of reducing filter capacitor, comprising a charge pump circuit, a charge pump control circuit and a nonrolatile storage, wherein the charge pump circuit comprises a N-level capacitor and N is a positive integer; the capacitor at each level is provided with a switching circuit which is connected with the capacitor; the switching circuit is connected with the charge pump control circuit; and the charge pump control circuit generates the different operating signals to control the switching circuit in accordance with the different operating modes of the storage. In the invention, regulation of drive capacity is realized by regulating the capacitor. In a partial selection mode, the capacitance is reduced so as to reduce the drive capacity of the charge pump, thereby decreasing the required filter capacitor; and in a full selection mode, the capacitance is improved so as to meet the drive capacity required by the mode. A switch is arranged in the charge pump and is used for controlling the capacitance, thus being capable of flexibly decreasing the filter capacitor and reducing chip area.

Description

technical field [0001] The invention relates to a memory system, in particular to a non-volatile memory system. Background technique [0002] Currently, if Figure 1 to Figure 3 As shown, in a non-volatile memory system, a charge pump with a fixed drive capability is usually selected according to the requirements of Flash or EEPROM, and then the filter capacitor is selected according to the filter requirements of the charge pump. In this way, the situation that arises is that the largest driving capacity is selected, and the largest filter capacitor is also selected. The actual situation is often that no additional filter capacitor is needed when a larger drive capacity is required, and when an additional filter capacitor is required, and There is no need for such a large drive capacity. There is often a contradiction between the drive capability and the matching of the filter capacitor. Contents of the invention [0003] The technical problem to be solved by the present...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02G11C16/06
Inventor 董乔华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP