Solid-state imaging device, manufacturing method therefor, and electronic device

Abstract

The invention relayes to a solid-state imaging device, a manufacturing method therefor, and an electronic device using the solid-state imaging device. The solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate. The solid-state imaging device could reduce the size of the solid-state imaging device without reducing the light receiving area.

Description

[0001] Cross References to Related Applications [0002] The present application contains subject matter related to the disclosure of Japanese Priority Patent Application JP2009-198118 filed in the Japan Patent Office on Aug. 28, 2009, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device, and more particularly to a solid-state imaging device formed by stacking a plurality of substrates and a method of manufacturing the solid-state imaging device. The present invention also relates to an electronic device using the solid-state imaging device. Background technique [0004] Solid-state imaging devices are roughly divided into charge-transport solid-state imaging devices represented by Charge Coupled Device (CCD) image sensors and amplification devices represented by Complementary Metal Oxide Semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image sensors. solid-state ...

AI Technical Summary

Problems solved by technology

However, in this way, although the size of the device can be reduced by adopting a three-dimensional structure, the light receiving area is reduced in the case where wiring and contacts are formed on the light receiving surface

Therefore, in order to maintain the light-receiving area, the pixel area must be increased by the same amount, so the size of the device cannot be reduced

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