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Flow guide cylinder used for czochralski silicon single crystal growth finance

A guide tube and silicon single crystal technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of uneven width, affecting the normal growth of silicon single crystal, shaking of silicon single crystal rod, etc., and achieve improvement Effects of flow shape, stable flow, and stability enhancement

Inactive Publication Date: 2011-04-13
JIANGSU HUASHENG TIANLONG PHOTOELECTRIC
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

However, during the silicon single crystal growth process, an annular gap is formed between the silicon single crystal rod and the lower end of the draft tube. If the lower end is not concentric, there will be a gap of uneven width between the silicon single crystal rod and the lower end of the guide tube, and the uneven flow of argon gas will cause the silicon single crystal rod to shake, thereby affecting the normal growth of the silicon single crystal

Method used

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  • Flow guide cylinder used for czochralski silicon single crystal growth finance
  • Flow guide cylinder used for czochralski silicon single crystal growth finance
  • Flow guide cylinder used for czochralski silicon single crystal growth finance

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Embodiment Construction

[0011] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0012] Such as figure 1 and figure 2 As shown, the guide tube for the straight-pull type silicon single crystal growth furnace of the present invention includes a guide tube body 1, the guide tube body 1 is a conical cylindrical structure with a large upper part and a smaller bottom part, and the lower end of the guide tube body 1 is opened There are a plurality of distributing grooves 2, and the distributing grooves 2 are annular and evenly distributed. Among them, according to the size of the guide tube body 1 and the specific process requirements for the growth of silicon single crystal, the number of splitter grooves 2 is selected, and the longitudinal cross-sectional shape of the splitter grooves 2 is selected. The longitudinal cross-sectional shape can be arched, rectangular, trapezoidal, Arc, triangle or other shapes. In this embod...

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Abstract

The invention discloses a flow guide cylinder used for a czochralski silicon single crystal growth finance. The flow guide cylinder comprises a flow guide cylinder body, wherein the flow guide cylinder body has a conical cylindrical structure which has a large upper part and a small lower part; and a plurality of shunt grooves are uniformly reserved on the lower end part of the flow guide cylinder body annularly. The flow guide cylinder used for the czochralski silicon single crystal growth finance has a simple structure and a reasonable design, is safe to use, can effectively improve the growth efficiency of silicon single crystals, and can be widely used in czochralski silicon single crystal growth equipment.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal preparation equipment, and in particular relates to a draft tube for a Czochralski type silicon single crystal growth furnace. Background technique [0002] Silicon single crystal is the main raw material for manufacturing integrated circuits and solar cells. The growth of silicon single crystal mainly uses a Czochralski silicon single crystal growth furnace to put silicon polycrystalline raw materials into a crucible and melt the silicon polycrystalline raw materials through a heater. Then, the ideal silicon single crystal is grown by the method of seed crystal guiding and upward pulling. During the continuous upward pulling silicon single crystal growth process, the process gas (high-purity argon) is charged from the top of the silicon single crystal growth furnace. In order to ensure the stable and rapid growth of silicon single crystal and the timely removal of volatiles, the A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 李留臣
Owner JIANGSU HUASHENG TIANLONG PHOTOELECTRIC
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