Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Electron-emitting device and electron source, electron beam apparatus as well as image display apparatus using the same

A technology of electron emission and devices, which is applied in the direction of image/graphic display tubes, cathode ray tubes/electron beam tubes, electrical components, etc., can solve the problems of improving stability over time and achieve the effect of minimizing production

Inactive Publication Date: 2011-04-13
CANON KK
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In Japanese Patent Application Laid-Open No. 2001-167693, the efficiency of electron emission characteristics is excellent, however, its stability over time needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron-emitting device and electron source, electron beam apparatus as well as image display apparatus using the same
  • Electron-emitting device and electron source, electron beam apparatus as well as image display apparatus using the same
  • Electron-emitting device and electron source, electron beam apparatus as well as image display apparatus using the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0134] Figure 1A is a schematic plan view of an electron-emitting device according to an embodiment of the present invention. Figure 1B is along Figure 1A The section taken by the line A-A. Figure 1C From Figure 1B A side view of the device viewed from the direction indicated by the arrow in .

[0135] exist Figure 1A , Figure 1B and Figure 1C , the insulating layers 3 and 4 form an insulating member. In this embodiment, this member forms steps on the surface of the substrate 1 . The gate electrode 5 is located on the insulating member. The cathode 6A is formed of a conductive material, is electrically connected to the electrode 2, is located on the outer surface of the insulating layer 3 as a part of the insulating member forming a step, and has a protruding portion serving as an electron emission portion. Recessed portion (recess) 7 is formed such that the side of insulating layer 4 is retracted inwardly to be recessed relative to the side (outer surface) of in...

no. 2 example

[0158] Figure 13A is a schematic plan view of an electron-emitting device according to an embodiment of the present invention. Figure 13B is along Figure 13A The section taken by the line A-A. Figure 13C From Figure 13A A side view of the device when viewed from the direction indicated by the arrow in .

[0159] exist Figure 13A , Figure 13B and Figure 13C In , the insulating layers 3 and 4 form insulating members and form steps on the surface of the substrate 1 . Gate electrode 5 is located on the outer surface of the insulating member (upper surface of insulating layer 4 ). The strip-shaped cathodes 60A1 to 60A4 are electrically connected to the electrode 2 and provided on the outer surface of the insulating layer 3 which is a part of the insulating member forming a step. The recessed portion 7 is formed such that the sides of the insulating layer 4 are retracted inwardly to be recessed relative to the outer surface (side) of the insulating layer 3 and the si...

no. 3 example

[0170] Figure 14Ais a schematic plan view of an electron-emitting device according to an embodiment of the present invention. Figure 14B is along Figure 14A The section taken by the line A-A. Figure 14C From Figure 14A A side view of the device when viewed from the direction indicated by the arrow in .

[0171] exist Figure 14A , Figure 14B and Figure 14C In , the insulating layers 3 and 4 form insulating members and form steps on the surface of the substrate 1 . The gate electrode 5 is located on the outer surface of the insulating member (on the insulating layer 4 forming a part of the insulating member). Strip electrode 6A is formed of a conductive material, is electrically connected to electrode 2 , and is provided on the outer surface of insulating layer 3 that is a part of the insulating member. A humped portion 6B of the gate electrode is formed of the same material as that used to form the cathode of the electron emission portion, and is connected to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an electron-emitting device and an electron source, an electron beam apparatus as well as an image display apparatus using the same. The electron beam apparatus includes: an insulating member having a recess on its surface; a cathode having a protruding portion extending over the outer surface of the insulating member and the inner surface of the recess; a gate positioned at the outer surface of the insulating member in opposition to the protruding portion; and an anode positioned in opposition to the protruding portion through the gate.

Description

[0001] This application is a divisional application of an invention patent application with an application date of April 10, 2009, an application number of 200910133527.0, and an invention title of "Electron Beam Device and Image Display Device Using Electron Beam Device". technical field [0002] The present invention relates to an electron beam apparatus using field emission (FE) electron emission devices and an image display apparatus using the electron beam apparatus. Background technique [0003] Hitherto, there have been electron-emitting devices in which a large number of electrons emitted from a cathode hit a gate electrode opposite to the cathode, are scattered, and are then taken out as electrons. [0004] As devices that emit electrons in this manner, surface conduction type electron-emitting devices and stacked type electron-emitting devices described in Japanese Patent Application Laid-Open No. 2001-167693 are known. [0005] Japanese Patent Application Laid-Ope...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J29/04H01J31/12
CPCH01J29/04H01J1/3046H01J31/127
Inventor 冢本健夫洼田央一
Owner CANON KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com