Method for manufacturing aluminium plug of power device
A manufacturing method and technology of power devices, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reduced device operation speed, longer device response period, and complicated manufacturing process of contact hole plugs, etc., to achieve high The effect of integration
Active Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0006] The manufacturing process of the above-mentioned contact hole plug is relatively complicated, which increases the production cost. At the same time, since the contact hole of the tungsten plug is used to connect the aluminum metal and the semiconductor substrate, two contact resistances will be formed, and the resistivity of tungsten itself (about 6 μΩ·cm to 12μΩ·cm) is very large, and its resistivity is about 6 to 7 times that of aluminum, so that the resistance of the contact hole plug made of tungsten and aluminum is higher than that of the plug contact hole made of aluminum directly. be large, resulting in a longer response period of the device, that is, a reduction in the operating speed of the device
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[0042] In order to better understand the technical content of the present invention, specific embodiments are given and described as follows in conjunction with the accompanying drawings.
[0043] The present invention proposes a manufacturing method of an aluminum plug for a power device, comprising the following steps:
[0044] providing a semiconductor substrate;
[0045] depositing an insulating layer on the semiconductor substrate;
[0046] depositing a passivation layer on the insulating layer;
[0047] Etching the passivation layer, the insulating layer and the semiconductor substrate respectively to form a cup-shaped contact hole;
[0048] depositing a diffusion barrier layer in the cup-shaped contact hole and on the surface of the passivation layer;
[0049] Filling the contact hole with aluminum metal to form an aluminum plug,
[0050] Wherein the top width of the cup-shaped contact hole is larger than the bottom width.
[0051] The side of the cup-shaped contac...
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Abstract
The invention provides a method for manufacturing an aluminium plug of a power device, comprising the following steps: providing a semiconductor substrate; depositing an insulating layer on the semiconductor substrate; depositing a passivation layer on the insulating layer; respectively etching the passivation layer, the insulating layer and the semiconductor substrate to form a cup-type contact aperture; depositing a diffusion-resisting layer in the a cup-type contact aperture and on the surface of the passivation layer; filling the contact aperture with metallic aluminium to form an aluminium plug, wherein top width of the cup-type contact aperture is greater than bottom width of the cup-type contact aperture. The method for manufacturing the aluminium plug of the power device provided by the invention can effectively reduce the production cost, and the aluminium plug made by the method has a good resistance property.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, and in particular to a method for manufacturing an aluminum plug of a power device. Background technique [0002] With the continuous development of semiconductor manufacturing technology, semiconductor power devices have finer patterns and higher integration. Between various patterns within a semiconductor device, contact structures are often used to provide electrical contact between circuit devices or interconnect layers. A conventional contact structure may include forming a contact hole in an interlayer dielectric layer, and then filling a conductive material into the contact hole. [0003] In recent years, the size of contact holes tends to be reduced due to the increasing integration of semiconductor devices. As the size of the contact hole shrinks, the previously used metal cannot be well filled in the contact hole during the metal contact process, thereby creating a problem o...
Claims
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Login to View More IPC IPC(8): H01L21/768
Inventor 敖良科邢进刘晓丽陈泰江
Owner SEMICON MFG INT (SHANGHAI) CORP