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Enhanced Defect Detection of Display Panels Using Front Side Illumination

A defect and panel technology, applied in the field of detecting defects in flat panel displays, can solve problems such as failure to provide a-Si residues

Active Publication Date: 2015-11-25
ORBOTECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Unfortunately, conventional techniques have failed to provide a suitable method for effectively detecting defect-forming a-Si residues on LCD panels during various stages of panel fabrication

Method used

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  • Enhanced Defect Detection of Display Panels Using Front Side Illumination
  • Enhanced Defect Detection of Display Panels Using Front Side Illumination
  • Enhanced Defect Detection of Display Panels Using Front Side Illumination

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Embodiment Construction

[0028] In the following detailed description, reference will be made to the accompanying drawings, in which elements with the same function will be assigned the same reference numerals. The above-mentioned drawings illustrate specific embodiments and implementations consistent with the principle of the present invention by way of illustration rather than limitation. These embodiments are described in sufficient detail to enable those skilled in the art to implement the present invention, and it should be understood that other embodiments can also be used and structural changes and / or substitutions can be made to various elements without departing from The scope and spirit of the present invention. Therefore, the following detailed description should not be interpreted in a restrictive sense. In addition, various embodiments of the present invention described may be implemented in the form of dedicated hardware or a combination of software and hardware.

[0029] Those skilled in...

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Abstract

Front-side illumination apparatus and methods are provided to enable, in general, detection of a-Si residue defects at the array test step well before the cell step. a-Si has high resistivity without exposure to light making it difficult to detect in conventional TFT-array test procedures. On the other hand, when the a-Si residue is illuminated with a light, its resistivity decreases, which, in turn, changes the electrical properties of the TFT array cell, which may be detected using the voltage imaging optical system (VIOS). In one implementation, the TFT array cell is exposed to illuminating light pulses, impacting the top side of the TFT panel during the testing performed using the VIOS. In one implementation, the front side illumination is traveling along the same path as the illumination used for voltage imaging in the VIOS. In another implementation, light source(s) for front side illumination are located in the close proximity to the VIOS modulator.

Description

[0001] Cross references to related applications [0002] This application is based on the U.S. Provisional Patent Application No. 61 / 055,031 filed on May 21, 2008, and claims the right of priority under 35 U.S. C119, which is hereby incorporated by reference in its entire disclosure. Technical field [0003] The present invention relates to detecting defects in flat panel displays, and more specifically, to detecting defects in flat panel displays using frontside illumination. Background technique [0004] In the manufacturing process of flat-panel liquid crystal (LC) displays, large bright thin glass plates are used as substrates for depositing thin film transistor (TFT) arrays. Generally, several independent TFT arrays are contained in a glass substrate plate, and are often referred to as TFT panels. Alternatively, an active matrix LCD (or AMLCD) covers this type of display using transistors or diodes at each pixel or sub-pixel, so this glass substrate panel can also be called an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/308
CPCG01R31/308G09G3/006
Inventor 丹尼尔·托特劳埃德·琼斯阿蒂拉·埃尔萨欣全明铁萨维尔·法姆郑森秀
Owner ORBOTECH LTD