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Memory management method for flash memory

A management method and flash storage technology, applied in the field of flash memory, can solve the problems of high RAM resource demand and high cost

Inactive Publication Date: 2011-05-04
SINO WEALTH ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0023] The purpose of the present invention is to provide a flash memory storage management method to solve the problem that the existing storage management has a high demand for RAM resources and a large cost

Method used

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  • Memory management method for flash memory

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Experimental program
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Embodiment 1

[0048] Embodiment 1: The division of regions is the same as the division of domains, that is, the size of a region is twice the size of a domain.

[0049] Since the division of areas is the same as that of domains, that is to say, areas can be equated with domains, that is, the method of building tables by domains is used to realize storage management of flash memory. For details, please refer to Figure 5 , which includes the following steps:

[0050] Step S1, creating a table: in this embodiment, a region is equivalent to a domain. Therefore, in the process of partitioning the flash memory, only the domains need to be divided. That is, the flash memory is divided into multiple domains according to a certain number of physical blocks. Next, the block address mapping table (L2PTable) and the physical block assignment table (Assign Table) between the logical block address and the physical block address are established in units of domains, so that the L2P Table and Assign Tab...

Embodiment 2

[0060] Embodiment 2: The division of regions is different from the division of domains, that is, the size of a region is twice or more than the size of a domain.

[0061] Since the division of areas is different from the division of domains, and the size of areas is an integral multiple of the size of domains, it indicates that domains are further divided on the basis of areas. That is to say, in this solution, the flash memory is firstly divided into areas, and then the areas are divided into domains; and then the storage management of the flash memory is implemented by building tables by area. For details, please refer to Figure 7 , which includes the following steps:

[0062] Step S10, creating a form, which includes the following steps:

[0063] First, the flash memory is divided into M areas, and a physical block assignment table (Assign Table) is established for each area, assuming that the number of physical blocks in each area is j.

[0064] Then divide each area i...

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Abstract

The invention discloses a memory management method for a flash memory. The method comprises the following steps of: partitioning the flash memory into at least one region and at least two fields, wherein each field comprises a plurality of physical blocks and the size of the region is integer multiples of that of each field; establishing a physical block distribution table by taking the region as a unit; establishing a block address mapping table between a logic block address and a physical block address by taking the field as a unit; and when reading and writing operation is performed on the flash memory, only calling the block address mapping table of a field corresponding to a current reading and writing operation address and the physical block distribution table of a corresponding region to a random-access memory (RAM). Therefore, only the block address mapping table of one field and the physical block distribution table of one region need storing temporarily in the RAM at any moment. Compared with the prior art in which the block address mapping table and the physical block distribution table of the entire flash memory are stored, the method reduces occupied RAM resources greatly and lowers cost.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a method for managing flash memory storage. Background technique [0002] Flash memory (Flash Memory), referred to as flash memory, is a non-volatile memory, that is, it can still maintain its stored data information in the case of power failure. Flash memory is a special electrically erasable programmable read-only memory (EEPROM) that can be erased and written in large blocks, allowing it to be erased (Erase) or written (Program) multiple times during operation. Its cost and speed have great advantages over ordinary EEPROM written in bytes, so it has become the most important and widely adopted technology for non-volatile solid-state storage. [0003] At present, flash memory is mainly divided into NOR type and NAND type. Compared with NOR Flash, NAND Flash has the advantages of fast erasing and writing speed, high storage density, and low unit cost, so it is very suitabl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 张钦苗诗君聂仙丽龚静
Owner SINO WEALTH ELECTRONICS