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Method for dynamically adjusting chemically mechanical polishing (CMP) rate

A polishing rate, chemical mechanical technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as waste of manpower, idle equipment, and reduced work efficiency, so as to reduce the frequency of downtime maintenance and improve work efficiency. efficiency effect

Inactive Publication Date: 2012-03-14
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will greatly reduce the efficiency of work, resulting in waste of manpower and idle equipment

Method used

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  • Method for dynamically adjusting chemically mechanical polishing (CMP) rate
  • Method for dynamically adjusting chemically mechanical polishing (CMP) rate
  • Method for dynamically adjusting chemically mechanical polishing (CMP) rate

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Embodiment Construction

[0031] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0032] In order to thoroughly understand the present invention, detailed steps will be presented in the following description, so as to illustrate how the present invention realizes the feedback adjustment of the polishing rate of the CMP equipment. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0033] refer...

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Abstract

The invention discloses a method for dynamically adjusting chemically mechanical polishing (CMP) rate. The method comprises the following steps: collecting polishing data within a specific historical time period, wherein the data comprises off-line polishing rates which are measured multiple times within the time period, and polishing rates at the beginning and end of the time period; and calculating the polishing thickness adjusted quantity of the polishing of each time according to the historical data to evaluate and feed back the wear condition of the wearable parts in a CMP equipment, so as to adjust the polishing rate of the CMP equipment in time, so that the CMP equipment can always work at the constant polishing rate, thereby reducing the shutdown maintenance frequency and enhancing the work efficiency.

Description

technical field [0001] The present invention relates to semiconductor manufacturing processes, and more particularly to methods for dynamically adjusting chemical mechanical polishing (CMP) rates. Background technique [0002] In the manufacturing process of integrated circuits, various layer structures such as semiconductor layers, conductive layers, and oxide layers are usually deposited sequentially on a silicon wafer. After each layer is deposited, an etching process may be required to form the desired pattern to form the circuit elements. The etching process can lead to uneven or non-uniform surfaces of the deposited layers, which can create defects during subsequent process steps. Therefore, it is necessary to planarize the surface of the device. [0003] Chemical Mechanical Polishing (CMP) is a common process used to planarize device surfaces. CMP technology is a combination of a rotating platform and a pneumatically driven grinding head. This process basically gri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/306
Inventor 潘继岗彭澎
Owner SEMICON MFG INT (SHANGHAI) CORP