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Thin film solar cells with monolithic integration and backside contact

A technology of contactors and back electrodes, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as labor and cost

Inactive Publication Date: 2011-05-04
SOLEXANT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It's a laborious and expensive process

Method used

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  • Thin film solar cells with monolithic integration and backside contact
  • Thin film solar cells with monolithic integration and backside contact
  • Thin film solar cells with monolithic integration and backside contact

Examples

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example 1

[0065] Example 1: Thin-Film CdTe Solar Cells with Series Interconnects and Backside Metal Contacts on Flexible Insulating Substrates

[0066] refer to figure 1 , which shows a cross-section of a photovoltaic device 101 according to an embodiment of the present invention. A photovoltaic cell 102 a , a photovoltaic cell 102 b , and a photovoltaic cell 102 c are shown, with adjacent cells 102 a and 102 b connected to each other by series interconnection vias 103 . Details of the via hole 103a are in Figure 2B Zoom in. Scribe lines 104a and 104b separate photovoltaic cell 102a and photovoltaic cell 102b. The scribe line 104a through the bottom electrode 112 is used in conjunction with the scribe line 105 in the back contact 107 to electrically isolate adjacent cells connected through the interconnection via 103 . Scribe line 104a is close to via hole 103 and isolates via hole 103 from electrical contact with the bottom electrode of cell 102a, but the bottom electrode of cell ...

example 2

[0067] Example 2: Thin-film CdTe solar cells on a flexible insulating substrate with via-filled series interconnections and backside metal contacts

[0068] special reference Figure 1-3 A process for manufacturing a solar cell according to the present invention will be described. The insulating substrate 109 is provided with a plurality of holes 106a, 106b, 106c and 106d having a set of diameters. The pores may be produced in any suitable manner determined by the material and size, shape and number of pores. The distance between the holes is variable. In one embodiment, the foil is punched with series interconnected holes spaced 10 cm apart laterally and 100 cm apart in rows in the vertical or longitudinal direction. Rows of current collecting holes were punched between rows of serially connected holes at intervals of 1 cm in both the x-direction and the y-direction. It is preferable to minimize the distance between current collecting vias to minimize electrical resistanc...

example 3

[0077] Example 3: Thin-Film CdTe Solar Cells with Series Interconnects and Backside Metal Contacts on Flexible Conductive Substrates

[0078] refer to Figure 4 , which discloses a photovoltaic device designed according to one embodiment of the present invention, having a photovoltaic cell 402a and an adjacent photovoltaic cell 402b connected by a series interconnection via 403 . Each cell 402a and cell 402b preferably has at least the following layer structure in order from bottom to top: back metal electrode 407, lower barrier layer 430, lower oxide layer 408, substrate 409, top oxide layer 410, top barrier layer 411 , bottom electrode 412 , absorber layer 413 , window layer 414 and transparent conductor layer 415 . Aperture 406a and aperture 406b define openings at the tops of current collecting via 416a and current collecting via 416b, respectively. The current collection via 416a and the current collection via 416b are located in adjacent photovoltaic cells 402b and 402...

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Abstract

The present invention discloses novel thin film photovoltaic devices with monolithic integration and backside metal contacts and methods of making the devices. The innovative approach described in the present invention allows for devices and methods of construction completely through thin-film processes. Solar cells in accordance with the present invention provide an increased output for large devices due to decreased current loss in the transparent conducting electrode.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application No. 61 / 130,926, filed June 4, 2008, and U.S. Provisional Patent Application No. 61 / 131,179, filed June 7, 2008, the contents of which are incorporated by reference way incorporated into this article. Background technique [0003] Current solar technology can be broadly classified into crystalline silicon technology and thin film technology; the present invention relates to thin film solar films. About 90% of solar cells are made of silicon (monocrystalline or polycrystalline). Crystalline silicon (c-Si) has been used as the light-absorbing semiconductor in most solar cells, although it is a relatively poor light absorber and requires fairly thick (hundreds of micrometers) material. Nevertheless, crystalline silicon proves to be convenient because it produces stable solar modules with good efficiencies (13-18%, one-half to two-thirds of the theoreti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/00
CPCH01L31/03925H01L31/0465Y02E10/50
Inventor D·雷迪C·莱德霍姆B·格根
Owner SOLEXANT
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