40results about How to "Reduce current loss" patented technology

The invention relates to an electrode which comprises a transparent conductive substrate, double-layer TiO2 nanoparticle films and metalgrid films, wherein the double-layer TiO2 nanoparticle films are covered on the conductive substrate in a blocky array way; the metal grid films are nested in the gaps among the blocky array of the double-layer TiO2 nanoparticle films; and the double-layer TiO2 nanoparticle film consists of a first-layer TiO2 nanoparticle film and a second-layer nanoparticle TiO2 film which are sequentially covered on the substrate. The invention also relates to a preparation method of the electrode and a dye-sensitized solar cell containing the electrode. The electrode of the dye-sensitized solar cell is beneficial to sufficiently absorbing light rays, can reduce the generation of dark currents and the current loss caused by the internal resistance of a transparent conductive film, and is suitable for preparing large-area dye-sensitized solar cells.

The invention relates to the technical field of solar cell preparation, and especially relates to a double-sided POLO (POLy-Si on passivating interfacial Oxides) battery and a preparation method thereof. Silicon oxide and a polysilicon layer are used to perform double-sided passivation, wherein the first function is that the surface defects of a silicon wafer surface are not only passivated and the response of weak light is increased, but also the contact between metals on the back and a semiconductor is passivated, and a contact negative charge value is reduced; and the second function is that there is no point contact due to complete passivation, a base region has no transverse transmission of minority carries or majority carries; and the third function is that the polycrystalline silicon is an indirect band gap, and the current loss is small.

The invention discloses a back contact type solar cell based on a P-type silicon substrate. One P-type silicon substrate is included. An illuminated surface of the P-type silicon substrate is provided with a p+ doping layer doped with boron. The illuminated surface is provided with a first anti-reflection passive film. A back side of the P-type silicon substrate is provided with a plurality of p+ doping regions doped with boron and a plurality of n+ doping regions doped with phosphori. Each p+ doping region is provided with one p++ heavily doped region. Each n+ doping region is provided with one n++ heavily doped region. A back side is provided with a second anti-reflection passive film. The second anti-reflection passive film is provided with a first electrode and a second electrode which are mutually insulated. The first electrode and the second electrode are electrically connected to the p++ heavily doped region and the n++ heavily doped region. The invention also discloses a manufacturing method of the solar cell. A P-type silicon wafer is used as a substrate material of the back contact type solar cell. A technology of the P-type silicon wafer is mature and an obvious cost advantage is possessed.

A single phase induction motor comprises: a stator installed at an inner circumferential surface of a motor housing, comprising a stator core on which a plurality of coils are wound; a rotor rotatably installed at a center of the stator and provided with a shaft at a center thereof; and a permanent magnetic unit in the air gap between stator and rotor and able to rotate around the shaft.

The present invention discloses novel thin film photovoltaic devices with monolithic integration and backside metal contacts and methods of making the devices. The innovative approach described in the present invention allows for devices and methods of construction completely through thin-film processes. Solar cells in accordance with the present invention provide an increased output for large devices due to decreased current loss in the transparent conducting electrode.

The invention discloses a redox flow battery electrode plate frame runner. The redox flow battery electrode plate frame runner comprises an electrode plate frame body, a lower-part electrolyte flowingsharing passage and a flowing limiting runner and also comprises at least one flowing dispersing runner and a flow sharing flowing runner, wherein the lower-part electrolyte flowing sharing passage is arranged at the electrode plate frame body in a penetrating way, the flowing limiting runner communicates with the lower-part electrolyte flowing sharing passage, the sharing flowing runner is connected with a plurality of flowing allocation runners, one end of each of the plurality of flowing allocation runners is connected with the flowing dispersing runner, and the other ends of the pluralityof flowing allocation runners communicate with an electrode cavity. In the redox flow battery electrode plate frame runner proposed by the invention, gradual dispersing flowing to the electrode cavity is employed, an electrolyte simultaneously enters the electrode cavity from the plurality of flowing allocation runners and acts with a porous electrode material, the redox flow speed is reduced, the uniformity of redox flow in the electrode material is improved, full contact of the electrolyte and the electrode material is improved, the surface utilization ratio of the electrode material is improved, the surface reaction polarization of the electrode is reduced, the internal current loss of the battery is reduced, the average power of a battery unit comprising the redox flow battery electrode plate frame runner can reach 300W or above, and the corresponding battery stack power can exceed 30kW.

The invention discloses a method for reducing the concentration of lead ions in a lead electrolyte. The method is applied in an electrolytic refining process of lead and comprises the following steps: (1) casting by virtue of a vertical die to obtain anode plates of which sizes are 1210*810*27mm and preparing cathode starting sheets of which sizes are 1370*840*(0.85+ / -0.05) mm by virtue of a cathode sheet processing machine; (2) arranging pitches between the newly manufactured cathode starting sheets and the anode plates by virtue of an automatic pitch arranging machine, loading into a tank, switching the direct current on and electrolyzing for 3.5-4 days; and (3) taking the cathodes out, reloading the newly manufactured cathode starting sheets, continuously electrolyzing for 3.5-4 days and taking the cathodes and residual anodes out so that an electrolytic period is completed. The method disclosed by the invention has the characteristics that the effect of reducing the concentration of lead ions in a lead electrolyte is obvious and economic and technical indexes such as the current efficiency, the rate of residual anodes and energy consumption are significantly improved, and is economical, environmentally friendly and strong in operability.

The invention provides a method for generating dozens of megampere pulse currents and a z-pinch direct drive source. The drive source comprises a primary pulse power source (thousands of fast discharge branch circuits are connected in parallel), a high-voltage transmission cable, a water medium electromagnetic induction chamber, a secondary MITL (Magnetically Insulated Transmission Line) and a z-pinch load, wherein the secondary MITL is formed by connecting multi-stage induction chambers in series; the z-pinch load is located on an axis; thousands of primary discharge branch circuits are located at the peripheries of the induction chambers and are divided into dozens of groups; the primary discharge branch circuits discharge rapidly to directly obtain an electric pulse with a leading edge of 100-200 ns, a voltage of 100-200 kV and a current of 30-50 kA. Currents of the thousands of branch circuits are transmitted and gathered on cable interfaces, which are uniformly distributed at the peripheries of the induction chambers, of dozens of I-shaped tri-plate transmission lines through the cable; the currents are gathered to the induction chambers for primary excitation through the tri-plate transmission lines; and the current gathering is realized through electromagnetic induction. Multi-stage induction chambers are connected in series to form an IVA (Induction Voltage Adder); the MITL is employed for a secondary stage of the IVA to realize voltage superimposition and power transmission; an ultra-high power electric pulse with a voltage of dozens of MV, a current of dozens of MA and a leading edge of 100-200 ns is generated on the Z-pinch load of the axis, and the requirement of a drive current of a Z-pinch ICF (Inertial Confinement Fusion) is met.

Disclosed is a rudder driving system (2) for actuating a rudder assembly (4) in watercraft, comprising at least one rudder (6) and two redundant, independently operable electro-hydraulic main drives (30, 32) for positioning the rudder(s). The rudder driving system includes an electro-hydraulic secondary drive (34) for positioning the rudder(s), said secondary drive (34) being operable independently of the main drives and being equipped with an electric motor (70) having a frequency converter (72) for driving a hydraulic pump (68). Also disclosed is a method for operating a rudder driving system of said type.

The invention discloses a wireless power supply warm keeping device. The wireless power supply warm keeping device comprises a power supply, an emission module, a receiving coil and a PTC electric heating chip; the emission module includes a frequency generation module and an emission coil; the frequency generation module is electrically connected with the emission coil to form a closed loop; the receiving coil and the PTC electric heating chip are electrically connected to form a closed loop; the power supply is electrically connected with the frequency generation module; the power supply outputs current; the frequency generation module generates high-frequency alternating current; the alternating current generates electromotive force through the emission coil; the electromotive force is coupled with inductance of the receiving coil; the current is transmitted to the receiving coil, and is output to the PTC electric heating chip for heating; and the wireless power supply warm keeping device is uniform in heating, safe, efficient and small in temperature difference.

The invention discloses a microbial fuel cell-based underground water organic pollution monitoring device and method and belongs to the technical field of water environment monitoring. The microbial fuel cell-based underground water organic pollution monitoring device comprises a device body, a water inlet pipe communicated with the device body and a battery device arranged inside the device body,wherein the battery device is composed of an anode chamber and a cathode chamber which are connected via wires, and a current monitoring device is arranged between the anode chamber and the cathode chamber; the top and the bottom of the device body are provided with openings, and the bottom of the device body is inserted into bottom mud of underground water; one end of the water inlet pipe is arranged inside the underground water, and the other end of the water inlet pipe is communicated with the device body; the anode chamber is arranged inside the bottom mud inside the device body, and thecathode device is arranged in the underground water inside the device body. The microbial fuel cell-based underground water organic pollution monitoring device can achieves real-time in-situ underground water monitoring and is applicable to in-situ field work and high in monitoring precision.

The invention provides a method for isolating a compound metal grid from a back electrode during large-area preparation of a dye sensitized solar cell (DSSC). The method comprises the following steps of: (1) sputtering a compound metal grid of Ti and Al on transparent conducting glass; (2) preparing a TiO2 nanoparticle film on a transparent conducting substrate by using a TiO2 sizing agent with ascreen printing method; and (3) heating the substrate on which the TiO2 sizing agent is printed to fully vaporize or oxidize organic matters in the TiO2 sizing agent, wherein an oxide of a Ti metal on an upper layer of the compound metal grid is taken as an isolated layer. Due to the adoption of the method provided by the invention, the isolation between an Al metal grid and an electrolyte duringthe encapsulation of the dye-sensitized solar cell is realized effectively, and the problem of internal short circuit of the DSSC is solved; and low-cost metals, i.e., Al and Ti are adopted instead of precious metals, i.e., Pt, Au and the like in the conventional process, so that a firm foundation is laid for the industrial mass production of DSSCs.

The invention provides a solar cell piece and a preparation method thereof and a solar cell module, wherein the solar cell piece is provided with metal grid lines which are low in electrical resistivity in a transparent conducting layer, so that the collection capacity of the transparent conducting layer on carriers can be greatly improved, the resistance of the transparent conducting layer is lowered, and the current loss during working of the solar cell is lowered; the thickness of the transparent conducting layer can be reduced by arranging the metal grid lines, so that the light transmittance is improved, and the photoelectric conversion efficiency of the solar cell is improved; meanwhile, the width of a sub battery can be properly increased, so that the number of scribed lines is reduced, and the dead zone area is reduced; in addition, compared with a continuous metal film layer, the light transmission area on the metal grid lines can further improve the light transmittance; the metal grid lines are covered with a first transparent thin film layer, so that the appearance consistency of the solar cell pieces can be improved; and the first transparent thin film layer can also protect the metal grid lines from being oxidized, so that the reliability of the solar cell is improved.

A single phase induction motor comprises: a stator installed at an inner circumferential surface of a motor housing, comprising a stator core on which a plurality of coils are wound; a rotor rotatably installed at a center of the stator and provided with a shaft at a center thereof; and a permanent magnetic unit in the air gap between stator and rotor and able to rotate around the shaft.

The invention discloses an electrode short circuit detection method and system based on conducting bar temperatures. The method comprises the steps that change of temperatures of a boss which is located on a conducting bar and is in overlap joint with an electrode contact spike is obtained; multiple temperature values within the set time period are obtained; whether the multiple temperature valuesare larger than the set temperature value or not is judged, if yes, it is determined that a short circuit occurs to an electrode in the corresponding position, and if no, the increment, changing along with time, of the multiple temperature values is determined; whether the increment is within the set temperature range or not is judged, if yes, the multiple temperature values are fitted in chronological order through a linear fitting method, and a linear model is obtained; the slope and the determination coefficient of the linear model are obtained; and whether the slope is within the set slope range or not is judged, if yes, whether the determination coefficient is smaller than the set determination coefficient value or not is judged, if no, it is determined that the short circuit occursto the electrode, and the electrode is free of short circuit under other conditions. By adopting the electrode short circuit detection method and system, whether a short circuit occurs to a cathode and an anode or not can be quickly found, after timely treatment, the electrolytic current efficiency and the product quality can be remarkably improved, and the product cost is reduced.

The invention relates to a GaN transistor device with a high-linearity composite gate structure and a preparation method of the GaN transistor device. The GaN transistor device comprises a substrate layer; a plurality of channel layers, wherein the plurality of channel layers are stacked on the substrate layer in sequence; grid electrodes arranged on the two sides and the tops of the channel layers and located in the middle of the GaN transistor device, wherein the grid electrodes are not arranged at the two sides of at least the channel layer on the bottommost layer; source electrodes arranged on the plurality of channel layers and positioned at a position close to one side of the GaN transistor device; and drain electrodes arranged on the plurality of channel layers and positioned at a position, close to the other side, of the GaN transistor device. The GaN transistor device provided by the invention has relatively high current driving capability, high linearity and low static power consumption.

The invention belongs to the technical field of electrolysis and specifically discloses a novel graphene ternary composite direct current-carrying plate. The novel graphene ternary composite direct current-carrying plate comprises a titanium plate, a graphene composite layer and a steel plate; the graphene composite layer is arranged between an anode plate and a cathode plate and is formed by doping a certain proportion of graphene into an aluminum network frame structure. The novel graphene ternary composite direct current-carrying plate disclosed by the invention is small in thickness, reduced in ohm voltage, good in porosity and small in current loss; the electrolysis power consumption is remarkably reduced, so that the product cost is remarkably reduced, and the industrial production market of a sodium chlorate electrolytic process is effectively promoted; and the energy consumption is reduced, and the novel graphene ternary composite direct current-carrying plate is beneficial toenvironment friendliness.

The invention discloses a welding method of a superconducting film material, which comprises the following steps that S1, a silver coating of a superconducting bare tape is covered with a plating layer, wherein the plating layer contains metal, and the resistivity of the metal is 10 <-8> omega.m magnitude or below; S2, bonding and fixing the welding parts of the adjacent superconducting bare tapes; and S3, placing the welding part under the conditions that the temperature ranges from 20 DEG C to 300 DEG C, and the pressure ranges from 0.02 MPa to 2 MPa, filling a joint with a welding flux, andobtaining the bare tape body. According to the invention, the silver coating can still maintain the original protection effect, so that a YBCO layer is not easy to damage, and the performance of thebare tape body after welding is improved.

The invention discloses a current boosting device, a current transformer and a current testing method, wherein the current boosting device is applied in the current transformer and a secondary open winding of the current transformer. The current boosting device comprises the components of a wiring part which is used for connecting with the secondary winding of the current transformer; an input coil which is connected with one end of the wiring part and winds one side of a magnetic core, wherein the side of the wiring part deviates from the current transformer; an output coil which winds the other side of the magnetic core; wherein the magnetic core is made of silicon steel sheet; and a measuring part which is connected with the output coil in an end-to-end manner, wherein a turn ratio between the input coil and the output coil is a preset number which is larger than 1. The current boosting device prevents incapability of measuring amplitude and phase of the to-be-measured current caused by oversmall current at the secondary winding side of the current transformer. Furthermore because the magnetic core is made of the silicon steel sheet with relatively high resistivity and highest magnetic conductivity, loss current reduction of the magnetic core is realized, thereby reducing loss of the magnetic core, and furthermore improving current amplifying capability of the current boosting device.

The invention discloses a back structure for improving a back efficiency of a double-sided PERC (Passivated Emitter and Rear Contact) cell, comprising a cell piece, wherein a back side of the cell piece is provided with a plurality of main grid lines in parallel, silver main grids and aluminum main grids are fixedly connected in an interval way, the length ratio between the silver main grid and the aluminum main grid is 1:2, conducting silver columns are inserted at four corners of the aluminum main grid in a penetrating way, the main grid lines are fixedly connected with high welding strips and low welding strips respectively, the high welding strips and the low welding strips on the silver main grids are arranged in parallel, and the high welding strips and the low welding strips on thealuminum main grids are arranged in a cross way. The back structure of the invention has the beneficial effects that: the width of a main grid part can be effectively reduced, thus the function of reducing a shading area can be achieved; the aluminum main grids which are conventionally used are replaced by the aluminum and silver main grids which are used in the interval way, so as to achieve lesscurrent loss in the way of reducing a contact resistance, and troublesome degree of welding can be reduced; in addition, stability after welding can be greatly improved, thus the back structure has high practicability, and is worth popularizing.

The invention provides a method for isolating a compound metal grid from a back electrode during large-area preparation of a dye sensitized solar cell (DSSC). The method comprises the following steps of: (1) sputtering a compound metal grid of Ti and Al on transparent conducting glass; (2) preparing a TiO2 nanoparticle film on a transparent conducting substrate by using a TiO2 sizing agent with ascreen printing method; and (3) heating the substrate on which the TiO2 sizing agent is printed to fully vaporize or oxidize organic matters in the TiO2 sizing agent, wherein an oxide of a Ti metal on an upper layer of the compound metal grid is taken as an isolated layer. Due to the adoption of the method provided by the invention, the isolation between an Al metal grid and an electrolyte duringthe encapsulation of the dye-sensitized solar cell is realized effectively, and the problem of internal short circuit of the DSSC is solved; and low-cost metals, i.e., Al and Ti are adopted instead of precious metals, i.e., Pt, Au and the like in the conventional process, so that a firm foundation is laid for the industrial mass production of DSSCs.

The invention relates to an insulating property monitoring device and an insulating property monitoring method of a high-voltage switching apparatus. The monitoring device comprises a sampling resistor and a sample processing device which is connected with the sampling resistor, wherein the sampling resistor and the sample processing device are arranged between the insulating shell of the high-voltage switching apparatus and the ground; and the sample processing device comprises a power supply device which provides power for the sample processing device and a transducer which is used for transmitting a signal. The monitoring method comprises the following steps that: the sampling resistor and the sample processing device which is connected with the resistor are arranged between the insulating shell of the high-voltage switching apparatus and the ground; the sample processing device converts a current or voltage signal of the sampling resistor into the standard current or voltage signal and outputs the standard current or voltage signal to externally connected equipment; and the externally connected equipment is compared with a preset value according to the standard current or voltage signal so as to judge whether the insulating property of the shell of the high-voltage switching apparatus is good or not. The device and the method of the invention have the advantage of timely monitoring the insulating property of the shell of the high-voltage switching apparatus and saving the maintenance cost.

A back contact type solar cell based on a P-type silicon substrate comprises a P-type silicon substrate (1). An illuminated surface of the P-type silicon substrate is provided with a boron-doped p+ doping layer (20). The illuminated surface is provided with a first anti-reflection passive film (30). A back surface of the P-type silicon substrate is provided with a plurality of boron-doped p+ doping regions and a plurality of phosphor-doped n+ doping regions (50). Each p+ doping region is provided with one p++ heavily doped region (60). Each n+ doping region is provided with one n++ heavily doped region (70). A back surface is provided with a second anti-reflection passive film (80). The second anti-reflection passive film is provided with a first electrode (91) and a second electrode (92), mutually insulated. The first electrode and the second electrode are electrically connected to the p++ heavily doped region and the n++ heavily doped region, respectively. Also provided is a preparation method for the solar cell. A P-type silicon wafer is used as a substrate material of the back contact type solar cell. The technology of the P-type silicon wafer is mature, and an obvious cost advantage is possessed.

The invention relates to a circuit board and its method and application for preventing circuit oxidation. The method includes: using glass, ceramics, PI, PET, PA or acrylic as a circuit board carrier; sputtering a first metal film layer on the circuit board carrier by magnetron sputtering; Electroplating the second copper film layer by an acidic electroplating method; electroplating a third metal film layer by an acidic electroplating method or sputtering a magnetron sputtering method on the second copper film layer; the thickness of the first metal film layer is 10-200nm ; The thickness of the second copper film layer is 5-100 μm; the thickness of the third metal film layer is 0.5-10 μm. The circuit board includes a circuit board carrier, and the first metal film layer, the second copper film layer and the third metal film layer are sequentially formed outward from the circuit board carrier. The method of the invention can effectively improve the anti-oxidation ability of the circuit board, thereby improving the service life and working stability and reliability of the circuit board.

The invention discloses a bias control loop of a power amplifier (PA) chip. The bias control loop comprises a control chip and the PA chip, the control chip is provided with a bias waveform generation circuit and a current and voltage control circuit which are connected with each other, the PA chip is provided with a sensor tube, and a base electrode end and a collector electrode end of the sensor tube are connected; and the current and voltage control circuit is respectively connected with the emitter end of the sensor tube and the connecting end of the base end and the collector end of the sensor tube. According to the invention, emitter voltage of the sensor tube on the PA chip can be collected, correction waveform and feedback waveform operation is carried out on the voltage, and finally the voltage is converted into bias current and directly transmitted to a collector and a base of the sensor tube, so that a simple closed-loop control circuit is formed, the structure of the control circuit is simplified, and the circuit cost is reduced. And moreover, the whole control process only needs to carry out voltage and current conversion once, so that the current loss caused by conversion can be reduced, and the control precision is improved.

The present invention relates to a composite system for photovoltaic (PV) modules. The composite system consists of a carrier foil, a metal foil applied onto the carrier foil, and an insulating layer applied onto the metal foil. Using different connecting techniques, different photovoltaic (PV) cells can be fastened to the composite system and electrically interconnected thereby. In addition, the invention relates to a method for producing the composite system for PV modules, and to the use of the composite system for the back side contacting of wafer cells that have both contacts on the same side and that are placed, with the contacts, onto conductor structures that interconnect them into a module, and to the use of the composite system for modules of internally interconnected thin-film cells.

The invention relates to an electrode which comprises a transparent conductive substrate, double-layer TiO2 nanoparticle films and metalgrid films, wherein the double-layer TiO2 nanoparticle films are covered on the conductive substrate in a blocky array way; the metal grid films are nested in the gaps among the blocky array of the double-layer TiO2 nanoparticle films; and the double-layer TiO2 nanoparticle film consists of a first-layer TiO2 nanoparticle film and a second-layer nanoparticle TiO2 film which are sequentially covered on the substrate. The invention also relates to a preparationmethod of the electrode and a dye-sensitized solar cell containing the electrode. The electrode of the dye-sensitized solar cell is beneficial to sufficiently absorbing light rays, can reduce the generation of dark currents and the current loss caused by the internal resistance of a transparent conductive film, and is suitable for preparing large-area dye-sensitized solar cells.

The invention discloses a bias control loop of a PA chip. The bias control loop includes: a control chip and a PA chip; the control chip is provided with a bias waveform generation circuit and a current and voltage control circuit connected to each other. The PA chip is provided with a sensor tube, the base terminal of the sensor tube is connected to the collector terminal; the current and voltage control circuit is respectively connected to the emitter terminal of the sensor tube and the base terminal and the collector terminal of the sensor tube Connection end connection. The invention can collect the emitter voltage of the sensor tube on the PA chip, and perform calculation on the voltage correction waveform and feedback waveform, and finally convert it into a bias current and directly transmit it to the collector and base of the sensor tube, forming a simple closed loop The control circuit is used to simplify the structure of the control circuit and reduce the cost of the circuit, and only one voltage and current conversion is required in the entire control process, which can reduce the current loss caused by the conversion, thereby improving the control accuracy.