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Method for isolating compound metal grid from back electrode during large-area preparation of dye sensitized solar cell (DSSC)

A composite metal and metal grid technology, applied in the field of solar photovoltaic utilization, can solve the problems of short circuit, hinder the industrialization of DSSC, and the failure of DSSC to work normally, and achieve the effect of avoiding internal short circuit, reducing internal resistance, and reducing possibility

Inactive Publication Date: 2013-01-16
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution does solve some problems to a certain extent, but due to the introduction of metal grids, a new problem arises
Since the back electrode Pt of the DSSC is a metal benign conductor, in this case, an electrical path will be formed between the metal grid-electrolyte-Pt back electrode of the FTO, forming a short circuit, which will eventually cause the DSSC to fail to work properly.
In addition, the high prices of Pt and Au hinder the industrialization of DSSC

Method used

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  • Method for isolating compound metal grid from back electrode during large-area preparation of dye sensitized solar cell (DSSC)
  • Method for isolating compound metal grid from back electrode during large-area preparation of dye sensitized solar cell (DSSC)
  • Method for isolating compound metal grid from back electrode during large-area preparation of dye sensitized solar cell (DSSC)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Isolation of Composite Metal Grid and Back Electrode

[0058] The transparent conductive substrate is made of FTO (F-doped tin oxide) conductive glass from Nippon Sheet Glass Company of Japan, and the substrate is placed in an ultrasonic water bath cleaning machine for cleaning and drying for the next step of the preparation process.

[0059] First prepare the TiO needed for screen printing 2 Slurry, concrete preparation steps are as follows:

[0060] 1) In 5 grams of TiO 2 The powder (manufactured by Degussa, Germany) was mixed with 1 ml of deionized water and 1 ml of glacial acetic acid and mixed for 10 minutes to obtain slurry A. Then slowly add 80ml of ethanol to the slurry A, and keep grinding the mixed solution when adding, and then continue grinding for about 10 minutes to make the slurry B;

[0061] 2) Transfer slurry B to a stirrer and stir for 60 minutes at a rotating speed of 2000r / min, add 15ml sesame oil brain, and continue stirring for 60min at a rotati...

Embodiment 2

[0072] Isolation of Composite Metal Grid and Back Electrode

[0073] The transparent conductive substrate adopts FTO (F-doped tin oxide) conductive glass from Nippon Sheet Glass Company of Japan, and the substrate is placed in an ultrasonic water bath cleaning machine for cleaning and drying.

[0074] According to the method preparation TIO of embodiment 1 2 After the paste, the composite metal grid is sputtered on the FTO conductive glass, first sputtering metal Al with a thickness of 80nm as the first layer; then sputtering metal Ti with a thickness of 55nm.

[0075] In the next step, TiO was screen-printed on the FTO conductive glass substrate. 2 Film preparation. The parameters of the screen are: mesh number 300, wire diameter 40 μm, pore diameter 45 μm, and opening ratio 28%. Firstly, the prepared TiO 2 The paste is printed on a glass substrate.

[0076] In the next step, the substrate printed with the paste was heated at 500°C for 2 hours, so that the TiO 2 The org...

Embodiment 3

[0080] Isolation of Composite Metal Grid and Back Electrode

[0081] The transparent conductive substrate adopts FTO (F-doped tin oxide) conductive glass from Nippon Sheet Glass Company of Japan, and the substrate is placed in an ultrasonic water bath cleaning machine for cleaning and drying.

[0082] According to the method preparation TIO of embodiment 1 2 After the paste, the composite metal grid is sputtered on the FTO conductive glass, first sputtering metal Al with a thickness of 200nm as the first layer; then sputtering metal Ti with a thickness of 145nm.

[0083] In the next step, TiO was screen-printed on the FTO conductive glass substrate. 2 Film preparation. The parameters of the screen are: mesh number 300, wire diameter 40 μm, pore diameter 45 μm, and opening ratio 28%. Firstly, the prepared TiO 2 The paste is printed on a glass substrate.

[0084] In the next step, the substrate printed with the paste was heated at 500°C for 2 hours, so that the TiO 2 The o...

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Abstract

The invention provides a method for isolating a compound metal grid from a back electrode during large-area preparation of a dye sensitized solar cell (DSSC). The method comprises the following steps of: (1) sputtering a compound metal grid of Ti and Al on transparent conducting glass; (2) preparing a TiO2 nanoparticle film on a transparent conducting substrate by using a TiO2 sizing agent with ascreen printing method; and (3) heating the substrate on which the TiO2 sizing agent is printed to fully vaporize or oxidize organic matters in the TiO2 sizing agent, wherein an oxide of a Ti metal on an upper layer of the compound metal grid is taken as an isolated layer. Due to the adoption of the method provided by the invention, the isolation between an Al metal grid and an electrolyte duringthe encapsulation of the dye-sensitized solar cell is realized effectively, and the problem of internal short circuit of the DSSC is solved; and low-cost metals, i.e., Al and Ti are adopted instead of precious metals, i.e., Pt, Au and the like in the conventional process, so that a firm foundation is laid for the industrial mass production of DSSCs.

Description

technical field [0001] The invention relates to a method for isolating a composite metal grid and a back electrode in a large-area preparation of a dye-sensitized solar cell, which belongs to the field of solar photoelectric utilization and also belongs to the field of nanotechnology. Background technique [0002] French scientist Henri Becquerel first observed the phenomenon of photoelectric conversion in 1839, but it was not until the advent of the first practical semiconductor solar cell in 1954 that the idea of ​​"converting solar energy into electrical energy" became a reality. There are many types of solar cells. If the material used is a narrow band gap semiconductor material with certain absorption in the visible region, this type of solar cell is also called a semiconductor solar cell. Although the ability of wide bandgap semiconductors to capture sunlight is very poor, if appropriate polymer dyes are adsorbed onto the semiconductor surface, with the help of strong ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/04H01M14/00H01L51/48H01L51/44
CPCY02E10/542Y02E10/549
Inventor 康晋锋王旭陆自清杨飞刘力锋
Owner PEKING UNIV
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