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Electrode and manufacturing method thereof

An electrode and microsphere technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low efficiency, reduced junction performance, and low fill factor

Inactive Publication Date: 2013-05-08
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This rough junction surface due to texturing degrades junction qualities such as low shunt resistance, high dark current, high carrier recombination rate, low fill factor, and low open circuit voltage, thereby reducing the energy of the solar cell. Conversion Efficiency and Reliability
[0010] In addition, this light-harvesting approach is not efficient in the frequency range very close to the bandgap energy of the absorber (i.e., near-infrared frequencies), so that light in this frequency range is mainly absorbed by the absorber.
This leads to the need to use a thick absorber, which further degrades the junction performance, especially when the absorber layer is an a-Si:H junction, due to the light radiation induced performance degradation (SWE) effect, which further degrades the junction performance
Also, it leads to longer deposition times, especially when the absorber layer is μc-Si:H
[0011] In addition, deposition of textured TCO films also requires high temperature and high cost

Method used

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  • Electrode and manufacturing method thereof
  • Electrode and manufacturing method thereof
  • Electrode and manufacturing method thereof

Examples

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no. 1 example

[0060] The electrode according to the first embodiment of the present invention may include a substantially planar metal thin film layer having a patterned structure configured to transmit incident light through the metal thin film layer.

[0061] Figure 2A Shows a structure view of the electrode sample 200-1 according to the first embodiment made by microsphere photolithography technology, wherein the radius of the polystyrene sphere R=220nm before photolithography, the microsphere radius reduction process is performed The radius of the final polystyrene ball is r=170nm, and the metal film deposited on the quartz substrate is 3nm of Cr plus 25nm of Au. Figure 2B Shows a structure view of the electrode sample 200-2 according to the first embodiment made by the microsphere photolithography technique, wherein the polystyrene sphere has a radius R=220nm before photolithography, and the microsphere radius reduction process is performed The radius of the final polystyrene ball i...

no. 2 example

[0085] Refer below Figure 10 to Figure 14 The electrode and its manufacturing method according to the second embodiment of the present invention will be described in detail.

[0086] Figure 10 A schematic structural diagram of a unimodal electrode 1000 according to a second embodiment of the present invention is shown.

[0087] Such as Figure 10 As shown, the unimodal electrode 1000 according to the second embodiment of the present invention is stacked on a light-absorbing material layer 1010 , and the light-absorbing material layer 1010 is stacked on an underlying metal film (eg, a metal back electrode) 1020 . here, Figure 10 The structure shown in can be equivalent to a solar cell. The unimodal electrode 1000 includes a planar metal thin film layer pattern, and the planar metal thin film layer pattern includes a first microstrip array having a first size and a first shape. In this case, the planar metal thin film layer pattern is configured to transmit incident ligh...

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Abstract

The present invention discloses an electrode including a substantially planar metallic thin film layer with a patterned structure, which is configured to transmit an incident light through the metallic thin film layer. With the patterned metallic thin film layer, thick transparent conductive oxide (TCO) film may not be used when fabricating electrodes for photovoltaic applications and optoelectronic applications so as to ensure a high conductivity and a high transmittance.

Description

technical field [0001] The present invention relates to the fields of photovoltaic applications and optoelectronic applications, and more specifically, to an electrode for photovoltaic applications or optoelectronic applications and a manufacturing method thereof. Background technique [0002] With the development of society, the storage of traditional energy such as oil and coal on the earth is gradually decreasing. As a substitute for traditional energy, solar energy has attracted more and more attention. In photovoltaic applications, solar cells are key elements in photovoltaic technologies that directly convert sunlight into electricity, and are widely used in a variety of applications from the universe to the home. [0003] The core of the solar cell is the P-N junction. When sunlight with energy higher than the energy of the semiconductor band gap is incident on the P-N junction of the solar cell, electron-hole pairs are generated. Under the action of the electric fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022491H01L31/1884H01L51/445Y02E10/50H10K30/83H01L31/18H01L31/0224
Inventor 王洋克日什托夫·肯帕任志锋
Owner SOUTH CHINA NORMAL UNIVERSITY