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Photomask for forming fine pattern and method for forming fine pattern with the photomask

A fine pattern and photomask technology, applied in the field of photomask, can solve the problems of weakening intensity, reducing pattern size consistency, increasing light diffraction, etc.

Active Publication Date: 2013-06-19
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Simply making the windows of the photomask used smaller to form fine patterns can lead to increased light diffraction
Thus, the intensity of light incident on the photosensitive material may become weak, and an undesired pattern shape may be obtained
Additionally, photomasks are more difficult to fabricate, increasing manufacturing costs and reducing pattern size uniformity

Method used

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  • Photomask for forming fine pattern and method for forming fine pattern with the photomask
  • Photomask for forming fine pattern and method for forming fine pattern with the photomask
  • Photomask for forming fine pattern and method for forming fine pattern with the photomask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1-1

[0040] use figure 1 The photomask shown in , where C = 18 microns and a = 3 microns, was patterned by the following procedure.

[0041]First, a negative-working photosensitive solution (e.g., LGSP A series commercially available from LG Chem) was spin-coated on a glass substrate and electrically heated at 100 °C for two minutes to form a uniform thickness of 4 μm. membrane. Next, the film was exposed to a high-pressure mercury lamp for 3 seconds using a photomask, developed with a KOH alkaline aqueous solution having a pH of about 11.5, and washed with deionized water. Then, the pattern formed on the glass substrate was observed. The dimensions of the pattern are measured using an optical microscope and compared to the diameter C of the photomask pattern.

Embodiment approach 1-2

[0043] Embodiment 1-2 is the same as Embodiment 1-1, but uses figure 1 The photomask shown in -where C = 18 microns and a = 6 microns.

Embodiment approach 1-3

[0045] Embodiment 1-3 is the same as Embodiment 1-1, but uses figure 1 The photomask shown in -where C = 18 microns and a = 9 microns.

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Abstract

The present invention provides a photomask with a main pattern and an auxiliary pattern that is contained in the main pattern. The photomask causes the fine pattern to form easily even through using the photomask with a relatively larger dimension.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2009-0128706 filed on December 22, 2009 and Korean Patent Application No. 10-2010-0118851 filed on November 26, 2010, both Korean The content of the patent application is incorporated herein by reference in its entirety. technical field [0003] The present disclosure relates to a photomask for forming a fine pattern, and more particularly, to a photomask for forming a fine pattern of a color filter of a liquid crystal display, wherein the photomask has a main pattern and a photomask contained in the main pattern. Auxiliary pattern in . Background technique [0004] Typically, a patterning method based on photolithography using a negative-tone photosensitive material is used to form a black matrix, color sub-pixels, and columnar spacers in a color filter of a liquid crystal display ("LCD"). [0005] The latest technological trend is to enhance th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/38G03F7/20G02B5/20G03F1/76
Inventor 李健雨郭尚圭李昌淳
Owner LG CHEM LTD