Method and device for measuring thermal resistance of diode

Abstract

The invention discloses a method and a device for measuring the thermal resistance of a diode. The method comprises the steps of: controlling the temperature at a PN junction of a tested diode through a temperature control technology so as to obtain the difference between the temperature at the junction of the tested diode and the external reference environment temperature (or the temperature at a reference point of a heat dissipation channel) under stable condition; and measuring an input electric power causing the rising of the temperature at the junction of the tested diode so that the thermal resistance of the tested diode can be computed. The device adopts a heating / cooling unit and a synchronous rapid sampling unit; and when the rising of the temperature at the junction of the tested diode can be ignored under a set higher temperature value, voltage amplitudes at two ends of the tested diode can be rapidly measured. Through the method and the device for measuring the thermal resistance of the diode, the precise measurement of the thermal resistance of the diode can be realized, the measurement is simple and rapid, the operation is convenient, and the stability is good.

Description

【Technical field】 [0001] The invention belongs to the field of semiconductor device measurement, in particular to a diode thermal resistance measurement method and device. 【Background technique】 [0002] The diode will generate a lot of heat during the working process, causing the temperature at the PN junction to rise, thereby affecting the working performance and service life of the diode. Therefore, in the structural design of the diode, its heat dissipation property is an important factor that must be considered. The thermal resistance of a diode indicates the ability of the diode to dissipate heat. Accurate measurement of diode thermal resistance has important reference significance for improving diode packaging and heat dissipation design, and will help diodes achieve rapid development and wider application. [0003] According to the internal structure of the packaged diode, when heat is generated inside the device, the heat diffuses to the external environment throug...

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Problems solved by technology

[0009] For the above measurement method, in the calculation of the temperature sensitive parameters, it is assumed that the change of the forward bias voltage of the diode and the junction temperature is linear, but in practice, different diodes, due to the difference in equipment technology and manufacturing process, their forward voltage and There is great instability in the junction temperature during the change process, and its linearity assumption needs to be verified; in addition, during the test process, it is assumed that the reference ambient temperature remains constant, but in the actual measurement process, due to the heat dissipation of the diode, The ambient temperature of its accessories will have a certain impact; in addition, in order to prevent the diode junction from cooling down during the current switching process, the current switching time is required to be extremely short, generally within a few microseconds, which will have higher requirements for the measuring equipment. And there is a lot of instability, the reproducibility is not ideal, and the test accuracy is not accurate enough

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