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Filling method and device for contact hole of complementary metal oxide semiconductor

A technology of oxide semiconductors and complementary metals, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as filling faults, reduce filling interruptions, and improve product reliability. Effect

Inactive Publication Date: 2011-07-06
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Abstract
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Problems solved by technology

[0006] The present invention is proposed for the problem that filling faults often occur when CMOS contact holes are filled. For this reason, the main purpose of the present invention is to provide a filling method and device for CMOS contact holes to solve the above problems

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  • Filling method and device for contact hole of complementary metal oxide semiconductor
  • Filling method and device for contact hole of complementary metal oxide semiconductor
  • Filling method and device for contact hole of complementary metal oxide semiconductor

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Embodiment Construction

[0026] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0027] According to an embodiment of the present invention, a method for filling a CMOS contact hole is provided.

[0028] figure 2 is a flowchart of a method for filling a CMOS contact hole according to an embodiment of the present invention.

[0029] Such as figure 2 As shown, the method includes the following steps S202 to S208:

[0030] Step S202, forming a photoresist film on the surface of the wafer;

[0031] Step S204, performing a hole photolithography process on the wafer to form a hole photolithography pattern on the surface of the wafer;

[0032] Step S206, performing isotropic etching and anisotropic etching respectively on the wafer to form connected first filled holes and s...

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Abstract

The invention discloses a filling method and device for a contact hole of a CMOS (Complementary Metal Oxide Semiconductor). The method comprises the following steps of: forming an optical stopping film on the surface of a wafer; carrying out hole photolithographic treatment on the wafer so as to form a hole photolithographic graphic on the surface of the wafer; respectively carrying out isotropic etching and anisotropic etching on the wafer so as to form a first filling hole and a second filling hole which are communicated with each other on the wafer; and filling the communicated first filling hole and second filling hole, wherein the etching depth of the first filling hole is more than that of the second filling hole. By adopting the filling method for the contact hole of the CMOS, the possibility of interrupting fillers in the contact hole of the CMOS can be reduced, therefore, the product reliability can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method and device for filling a complementary metal oxide semiconductor contact hole. Background technique [0002] In the traditional 0.6um complementary metal oxide semiconductor (CMOS) process, the fabrication of contact holes is divided into two parts: bowl etching and straight hole etching, and the etching depth of the two is 1:1. [0003] figure 1 It is an aluminum filling pattern according to the ratio of isotropic etching and anisotropic etching of 1:1 according to the related art. [0004] Such as figure 1 As shown, the aluminum filling situation formed by using the prior art isotropic etching and anisotropic etching with a ratio of 1:1, it can be seen that because the isotropic etching is shallower and the anisotropic etching is deeper, figure 1 The aluminum filling at the junction of the straight hole space marked by the middle oval circle and the bowl mouth space is...

Claims

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Application Information

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IPC IPC(8): H01L21/8238H01L21/768H01L27/092H01L23/522
Inventor 黎智张洞庭谭志辉
Owner PEKING UNIV FOUNDER GRP CO LTD
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