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Sputtering system

A sputtering system and sputtering technology, applied in the field of sputtering systems, can solve problems such as the plasma effect cannot be completely eliminated, and achieve the effect of preventing damage

Inactive Publication Date: 2011-07-13
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Other existing systems and processes attempt to minimize the plasma effect by applying a bias voltage to the deposition substrate; these systems cannot completely eliminate the plasma effect

Method used

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Embodiment Construction

[0025] In the following detailed description, only certain exemplary embodiments of the present invention are shown and described with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Accordingly, the drawings and descriptions are to be regarded as illustrative in nature and not restrictive. Like numbers generally refer to like parts throughout the description and drawings.

[0026] figure 1 is a schematic diagram of an embodiment of a sputtering system. refer to figure 1 , an embodiment of the sputtering system includes: a first sputtering unit 1 comprising a first deposition material plate 10, a second deposition material plate 20 and a magnetic field generator 35; a second sputtering unit 2 comprising a third deposition material plate 30 , the fourth deposition material plate 40 and another magnetic field genera...

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Abstract

A sputtering system is disclosed. The sputtering system includes: a first sputter unit including: a first deposition material plate, a second deposition material plate, where the first and second deposition material plates face each other, and a first magnetic field generator disposed behind each of the first deposition material plate and the second deposition material plate, configured to generate a magnetic field, a second sputter unit including: a third deposition material plate, disposed next to the first deposition material plate, a fourth deposition material plate, disposed next to the second deposition plate, where the third and fourth deposition material plates face each other, and a second magnetic field generator disposed behind each of the third deposition material plate and the fourth deposition material plate, configured to generate a magnetic field, a first gas supply pipe disposed between the first and third deposition material plates, configured to discharge gas to the second and fourth deposition material plates, a second gas supply pipe disposed between the second fourth deposition material plates, configured to discharge gas to the first and third deposition material plates, a first substrate support unit, configured to support a first deposition substrate, oriented toward outer edges of the first and second deposition material plates, and a second substrate support unit, configured to support a second deposition substrate, oriented toward outer edges of the third and fourth deposition material plates.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2010-0002243 filed with the Korean Intellectual Property Office on Jan. 11, 2010, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates generally to a sputtering system, and more particularly, to a sputtering system configured to achieve uniform sputtering and deposition. Background technique [0003] There are various sputtering methods used to form inorganic layers such as metal layers, transparent conductive layers, and the like. In these sputtering methods, a rare gas such as argon (Ar) gas is introduced into a vacuum vessel, a radio frequency (RF) voltage or a direct current (DC) voltage greater than 150 V is supplied to a cathode comprising a plate of sputter-deposited material, And the layer is formed by the slow release of gas. [0004] During the manufacture of flat panel display (FPD) devices, such as forming ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCH01J37/3405H01J37/347H01J37/345H01J37/32449H01J37/3417C23C14/352
Inventor 崔丞镐郑石源崔永默宋贤根
Owner SAMSUNG DISPLAY CO LTD